![BCR 108L3 E6327 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | BCR108L3E6327-ND |
Manufacturer Part#: |
BCR 108L3 E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS NPN 250MW TSLP-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 5mA, 5V |
Base Part Number: | BCR108 |
Supplier Device Package: | PG-TSLP-3-4 |
Package / Case: | SC-101, SOT-883 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 170MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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Transistors are three-terminal devices that can be used to amplify electrical signals. BCR 108L3 E6327 is one of the variety of transistors available in the market. This transistor belongs to the category of Pre-Biased Single Bipolar Junction Transistors (BJT). In this article, we will discuss the application field and working principle of BCR 108L3 E6327.
Application
BCR 108L3 E6327 is mainly used for high frequency applications such as data acquisition, power amplifiers, radio receivers, and satellite communication systems. It is also used as a switch in electronic circuits. In addition to this, the transistor is used in medical imaging systems due to its low noise characteristics. It is also used for the purpose of signal conditioning, signal isolation and low speed switching.
Working principle
BCR 108L3 E6327 is a Pre-Biased Single Bipolar Junction Transistor (BJT). It consists of three terminals: emitter, base and collector. The emitter is connected to the negative terminal of the bias source and the collector is connected to the positive terminal. The bias voltage is set through the base-emitter voltage. This bias voltage will determine the gain of the transistor.
When a small signal is applied to the emitter side of the transistor, it will cause a small amount of current to flow through the base-collector diode. This current will increase the voltage drop across the base-emitter junction. The increase in voltage will cause the transistor to turn ON, allowing a larger current to flow from the collector to the emitter. This increase in current further increases the voltage drop across the base-emitter junction, resulting in the transistor being completely ON. The transistor can now amplify the signal.
Once the signal is amplified, it can then be applied to the load to produce the required output. This load can be a speaker, or a display device or any other output device. Thus, the output of the transistor will depend upon the gain of the transistor and the magnitude of the signal applied to it.
Conclusion
BCR 108L3 E6327 is a Pre-Biased Single Bipolar Junction Transistor (BJT). It has wide range of applications in medical imaging, data acquisition, power amplifiers, radio receivers and other such systems. The transistor works on a simple working principle where a small signal applied to the emitter side of the transistor causes a small current to flow through the base-collector diode, which in turn increases the voltage drop across the base-emitter junction. This increases the current flowing from the collector to the emitter, resulting in the transistor being fully ON. The transistor can then amplify the signal and produce the required output.
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