BCR 114T E6327 Allicdata Electronics
Allicdata Part #:

BCR114TE6327-ND

Manufacturer Part#:

BCR 114T E6327

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PREBIAS NPN 250MW SC75
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: BCR 114T E6327 datasheetBCR 114T E6327 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 160MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75
Description

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Transistors are an important component in the construction of electronic devices and are used in a wide variety of applications. The BCR 114T E6327 transistor is a single, pre-biased transistor well suited for a range of applications. This transistor is a bipolar type, meaning it is capable of controlling the flow of current with both the positive and negative cycles of an AC current. This allows for more efficient use of power and greater control in applications.

The BCR 114T E6327 is a NPN type bipolar transistor and is designed for medium power applications. It has a veryfficient collector-emitter breakdown voltage rating of 45V and can handle collector currents up to 2A. This makes it an ideal choice for switching power supplies and other applications requiring a high level of current control. This device also features a low collector-base capacitance, which helps reduce switching noise.

The most defining feature of this transistor is its pre-biased design. Instead of configuring the collector and base electrodes of the transistor with a bias voltage, the prebiased design uses the inherent characteristics of the active region in the transistor to bias the transistors, thus providing a more stable operation with higher fidelity.

The working principle of the BCR 114T E6327 is fairly simple. When an active signal is applied between the base and emitter terminals of the transistor, a current starts to flow through the base and emitter of the transistor which is subsequently amplified and passed through to the collector. In doing so, the gain of current can be manipulated by increasing the voltage supplied to the base, thus allowing the transistor to be effectively used as an amplifier.

When the BCR 114T E6327 is used in applications such as in power controllers, the amplifier gain can be increased and controlled by manipulating the biasing current between the collector and base terminals. By doing this, the current gain or power consumption can be precisely controlled in order to ensure the desired output is achieved. Additionally, the pre-biased design helps to stabilize the overall operation of the transistor and reduce switching noise.

The BCR 114T E6327 is an ideal choice for a wide range of medium power applications such as power controllers, switching power supplies, amplifiers, and electronic circuits. With its pre-biased design, this transistor can provide better stability and higher fidelity, making it a great option for many different applications.

The specific data is subject to PDF, and the above content is for reference

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