BCR 119 E6433 Allicdata Electronics
Allicdata Part #:

BCR119E6433-ND

Manufacturer Part#:

BCR 119 E6433

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PREBIAS NPN 200MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: BCR 119 E6433 datasheetBCR 119 E6433 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 150MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: BCR119
Description

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Transistors, or Transistor-Transistor-Logic (TTL), are electronic components used in electronic switching applications. The BCR-119E6433 is a single, pre-biased bipolar junction transistor (BJT) specifically designed for use in switching applications. It has become a popular choice for industrial, automotive and consumer electronics since its introduction.

The BCR-119E6433 is a pre-biased transistor which means that it requires very little current to operate. It is capable of handling up to 30V and has an on-state resistance of 6Ohm. It is also rated for an off-state leakage current of 25mA maximum. This transistor has a maximum collector-emitter (CE) voltage of 40V and a maximum forward current of 80mA. The BCR-119E6433 also has excellent noise immunity and a no-parasitic resistance.

The BCR-119E6433\'s versatility and ease of use makes it a great choice for many applications, including automotive, consumer electronics, industrial and medical. The most common application for this transistor is as an electronic switch, which is used to turn on and off electrical devices. The BCR-119E6433 can control a variety of loads, including a wide range of resistors, inductors and capacitors. Furthermore, it is fast enough to be used in switching applications where the switching frequency is in the range of a few hundred kHz.

The working principle of the BCR-119E6433 is based on the basic principle of a bipolar junction transistor (BJT). A BJT consists of two PN junctions connected to three terminals. When a small current is applied to the base terminal, a larger current can flow from the collector to the emitter terminal. The ratio of the collector current to the base current is called the gain of the transistor. The BCR-119E6433 features a high gain which enables it to quickly switch high-current loads.

In addition to its fast switching speed, one of the main advantages of the BCR-119E6433 is its low power dissipation. This is because the current drawn by the transistor is very small in comparison to the power used to control the load. This makes it an ideal choice for applications where power efficiency is important, such as battery-operated devices.

Overall, the BCR-119E6433 is an excellent choice for a wide range of switching applications. Its excellent noise immunity, fast switching speed and low power dissipation make it a great choice for applications where reliability and efficiency are key. As such, it has become a popular choice in industrial, automotive and consumer electronics applications.

The specific data is subject to PDF, and the above content is for reference

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