![BCR 133T E6327 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | BCR133TE6327-ND |
Manufacturer Part#: |
BCR 133T E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS NPN 250MW SC75 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V |
Base Part Number: | BCR133 |
Supplier Device Package: | PG-SC-75 |
Package / Case: | SC-75, SOT-416 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 130MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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BCR 133T E6327 is a single, pre-biased bipolar (BJT) transistor. It has three terminals: Collector, Base and Emitter. A simplified internal diagram of the BCR 133T E6327 transistor is shown in Figure 1. The Collector of the transistor is connected to its Base and Emitter through the base-collector and base-emitter junctions. The Collector and Emitter of the transistor are connected through a thin film resistor. The base-emitter junction of the BCR 133T E6327 is reverse biased, with the base voltage greater than the emitter voltage. The collector junction of the transistor is forward biased, with the collector voltage greater than the base voltage.
![bcr.jpg](bcr.jpg)
The BCR 133T E6327 transistor is typically used in digital circuits and systems, in which very high switching frequency is required. It is also used in switching applications such as logic gates, multiplexers and flip-flops. Additionally, it is used in amplifiers and oscillators.
The working principle of the BCR 133T E6327 transistor is based on the principle of current conduction. Current passes through the transistor when a voltage is applied to the emitter-base junction. The amount of current that passes through the transistor is determined by the ratio of the voltage applied to the emitter-base junction to the voltage applied to the collector-base junction. The collector current increases exponentially with the increase in base-emitter voltage.
When a positive voltage is applied to the base of the BCR 133T E6327 transistor, current flows through the transistor and the collector-emitter junction is forward biased. This allows current to flow from the collector to the emitter. The amount of current that flows through the transistor is proportional to the control voltage applied to the base. When a negative voltage is applied to the base of the transistor, the collector-emitter junction is reverse biased, which prevents current from flowing from the collector to the emitter.
The BCR 133T E6327 transistor is used in a wide range of applications, including switching circuits, amplifiers, digital circuits, and oscillators. It is a useful component for a variety of projects, and its simple design makes it easy to use and understand. In addition, the BCR 133T E6327 transistor is relatively inexpensive, making it a popular choice for many applications.
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