
Allicdata Part #: | BCR139L3E6327-ND |
Manufacturer Part#: |
BCR 139L3 E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS NPN 250MW TSLP-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 150MHz |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-101, SOT-883 |
Supplier Device Package: | PG-TSLP-3-4 |
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BCR 139L3 E6327 is categorized as a single, pre-biased transistor, also known as bipolar junction transistor (BJT). They are commonly used in digital and analog circuits, such as for switching and amplification of signals.
A transistor is a semiconductor device capable of amplifying or switching electronic signals. A BJT consists of three terminals, the base, collector, and emitter, with two p-n junctions. The collection of the two p-n junctions provide the BJT with its basic characteristics, allowing it to behave like a voltage-controlled switch and/or an amplifier.
The BCR 139L3 E6327 has special features to allow it to be pre-biased and to increase channel breakdown voltage. It is a low forward voltage drop diode transistor, with PNP structure. The pre-bias feature makes the transistor easier to use, because it can be connected to a Vcc without any bias current, resulting in the transistor being immediately operational.
The BCR 139L3 E6327 can be used in a wide range of applications, including power switching and motor control, LED lighting, and driving modules. It can be used in high-side switching and low-side switching applications. The BCR 139L3 E6327 can also be used in power control applications, such as Buck and Buck-Boost converters, as well as isolated flyback converters.
The transistor operates with very low base current and low positive saturation voltage. It allows for fast switching due to its low on-state resistance and high speed of turn-on and turn-off. The transistor is capable of providing high gain and low output impedance. Due to its low on-state resistance and low power consumption, it is ideal for various power management applications.
The BCR 139L3 E6327 is capable of operating at very high temperatures, and can withstand over-voltage and over-current without fail. The BCR 139L3 E6327 is especially designed to provide excellent, dependable performance under extreme environmental conditions.
The working principle of the BCR 139L3 E6327 is based on the same principle as that of other BJT transistors. When a current is applied to the base, it then controls the current flowing in the connector-emitter junction. This in turn affects the current flow between the collector and the emitter.
The BCR 139L3 E6327 is a powerful transistor capable of providing high gain, low power consumption, fast switching speed and high temperature stability. Due to its special features and wide range of applications, it is the ideal choice for many electronic applications.
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