Allicdata Part #: | BCR142TE6327-ND |
Manufacturer Part#: |
BCR 142T E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS NPN 250MW SC75 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | BCR 142T E6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 5mA, 5V |
Base Part Number: | BCR142 |
Supplier Device Package: | PG-SC-75 |
Package / Case: | SC-75, SOT-416 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 150MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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BCR 142T E6327 is a type of single, pre-biased, bipolar transistor. Its primary application field is in high-speed communications photography, as it has high-speed switching performance, low-noise-motion performance and high linearity features. In addition, it can also be used in RF, microwave and other areas that require noise improvement. The BCR 142T E6327 has some distinct characteristics that make it outstanding for specific applications.
The BCR 142T E6327 has a collector-emitter breakdown voltage of 30V and can handle high temperatures of up to 275°C. Additionally, this transistor is highly sensitive to high-frequency signals and has very low flicker noise. Moreover, it is a class A device and its collector currents an operate up to 5A. The device also features a wide voltage range from 0.6V to 5V and a base current of only 10µA.
As for physical characteristics, the BCR 142T E6327 has a chip size of 3.0mm x 2.8mm and a height of 1.0mm. The device utilizes a mixed-signal circuit and a very small form factor, making it suitable for use in many applications such as in radio frequency (RF) telecommunication systems. As for power consumption, the device requires a low power operation of only 0.5W.
BCR 142T E6327 also has a very special feature worth mentioning—its built-in pre-biased structure (PPO feature). This feature provides higher-speed switching performance, lower noise-motion performance, and superior linearity. In this way, the BCR 142T E6327 can achieve efficient and stable operation in various electronics devices.
The working principle of BCR 142T E6327 mainly includes two main aspects. Firstly, it uses a base-collector emitter or B-E structure as a normal common-base type transistor, but with a pre-biased structure. This helps to reduce the base-emitter voltage, thus reducing the turn-on time of the device. Secondly, it employs bipolar junction technology to improve the current gain, thus increasing the device efficiency.
In conclusion, the BCR 142T E6327 is a single, pre-biased, bipolar transistor with many features and applications. Its high speed switching performance, low noise-motion performance, and high linearity make it suitable for high-speed communications photography, as well as for other applications. In addition, its pre-biased structure (PPO feature) helps to optimize the device energy efficiency. Furthermore, its working principle is based on the common-base transistor technology.
The specific data is subject to PDF, and the above content is for reference
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