
Allicdata Part #: | BCR149L3E6327-ND |
Manufacturer Part#: |
BCR 149L3 E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS NPN 250MW TSLP-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 70mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 150MHz |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-101, SOT-883 |
Supplier Device Package: | PG-TSLP-3-4 |
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BCR 149L3 E6327 is a pre-biased, single bipolar junction transistor (BJT). Constructed with three layers of semiconductor material, the BJT is designed to map electrical current and voltage flows which can then be used to amplify a wide range of signals, create digital logic functions, or serve as switches. While commonly used in analog and digital electronics, BJTs are not suitable for use in high-power applications, as they may be easily damaged through excessive heating or physical stress.
Structure
The BCR 149L3 E6327 is in the form of a disc with a single-pole vertical mount. It consists of three layers: an ohmic contact, a base, and an emitter. The ohmic contact is the bottom-most layer and is made of a conductive material such as aluminum. The base is the middle layer and is made of a semiconductor material. It acts as a conduction barrier between the ohmic contact and emitter layers. The emitter is the top-most layer and is typically composed of lightly-doped polysilicon which allows for efficient current transfer.Operation Principle
The BCR 149L3 E6327 requires an input signal to initiate conduction between the ohmic contact and base layers. When provided with an input signal, electrons from the ohmic contact layer start to move towards the base layer. These electrons create a potential gradient, allowing current to flow from the ohmic contact to the base layer. As the current flows through the base layer, further electrons are released, creating an even greater potential gradient across the base and emitter layers. This causes current to flow from the emitter to the base layer, which generates the output signal.Applications
The pre-biased nature of the BCR 149L3 E6327 makes it especially suitable for use as a switch, allowing signals to be quickly and easily toggled between two states. This is often used to create digital logic circuits and a wide range of other operations. It can also be used as a resistor, allowing it to function as a part of a feedback loop or as a voltage regulator. Additionally, it can be used as an amplifier to boost or reduce the amplitude of an input signal. Finally, the BJT can be used as an oscillator, allowing it to be used to generate a wide range of frequency signals for radio, telecommunications, or precision instrumentation applications.Conclusion
The BCR 149L3 E6327 is a pre-biased, single bipolar junction transistor which is used for a wide range of analog and digital electronics applications. It is capable of operating as a switch, resistor, amplifier, or oscillator and is often used in combination with other components to create complex feedback loops, digital logic circuits, or communication systems. Due to its voltage and current-handling capabilities, the BCR 149L3 E6327 is an invaluable component in many types of electronics projects.The specific data is subject to PDF, and the above content is for reference
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