BCR 158T E6327 Allicdata Electronics
Allicdata Part #:

BCR158TE6327-ND

Manufacturer Part#:

BCR 158T E6327

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PREBIAS PNP 250MW SC75
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: BCR 158T E6327 datasheetBCR 158T E6327 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Base Part Number: BCR158
Supplier Device Package: PG-SC-75
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Power - Max: 250mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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The BCR 158T E6327 is one of the most popular transistors classified as a single, pre-biased bipolar junction transistor (BJT). It is used in a wide range of applications and has a range of features including an integrated Schottky diode and a low base to collector capacitance. In this article we will explore the application field and working principle of the BCR 158T E6327.

The BCR 158T E6327 is typically used as a switching device in power management systems due to its ability to rapidly and reliably switch in the order of a few nanoseconds. This means that it is ideal for a range of applications including consumer electronics, power supplies, control systems and lighting systems. Its low base to collector capacitance and integrated Schottky diode help to ensure a very low power loss in the switching process, making it an attractive option for power management systems.

The BCR 158T E6327 uses the bipolar junction transistor construction, which is made up of two PN junction transistors placed back to back. This type of construction is useful because when current flows through both transistors, it creates a gain in current through the base, allowing for the amplification of the signal. This is how the BCR 158T E6327 works - current flowing through the base is amplified and the added current passes through the collector, while the excess is dissipated through the emitter.

The BCR 158T E6327 also has a range of other features that make it a popular choice for power management applications. For example, it has a very low breakdown voltage, meaning it can handle higher voltages and it has a low on-state voltage drop, making it ideal for power management applications. In addition, it has a low gate-drain capacitance, low gate-source capacitance and a very low feedback capacitance, all of which help to ensure that the switching process is fast, reliable and efficient.

In addition to the range of features that the BCR 158T E6327 offers, it also has a number of features that make it suitable for a range of applications beyond power management systems. For example, it is ideal for switching as well as audio and video applications. In addition, it also offers a range of benefits when used in digital circuits due to its high switching speed and low power consumption.

In summary, the BCR 158T E6327 is a popular single, pre-biased bipolar junction transistor which is used in a range of applications. It features an integrated Schottky diode and a low base to collector capacitance and works by amplifying current flowing through its base and then passing excess current through the collector whilst dissipating the rest through the emitter. Its range of features make it ideal for power management systems as well as other applications such as audio and video processing, making it a popular choice for a range of industries.

The specific data is subject to PDF, and the above content is for reference

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