Allicdata Part #: | BCR162TE6327-ND |
Manufacturer Part#: |
BCR 162T E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS PNP 250MW SC75 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | BCR 162T E6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 5mA, 5V |
Base Part Number: | BCR162 |
Supplier Device Package: | PG-SC-75 |
Package / Case: | SC-75, SOT-416 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 200MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 4.7 kOhms |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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The BCR 162T E6327 is a transistor designed for a variety of applications. It belongs to the categorization of transistors known as "single, pre-biased," which also includes dual devices with pre-biased emitter-base configurations.The BCR 162T E6327 is a n-channel depletion-mode field-effect transistor (FET) with a high-speed cutoff frequency of up to 850MHz. It features an oxide-isolated surface-mount package. Along with its low drain-source on-state resistance, it allows for a dissipation of 3 watts of power. It also has an excellent linearity, low temperature coefficient and short turn-off time.The BCR 162T E6327 is used in a variety of applications, such as low-frequency switching, power semiconductor control, transistor switch array and motor control applications. This device can also be used to drive FETs with a greater maximum current capability.The purpose of the BCR 162T E6327 and other transistors, in general, is to act as a type of electronic switch. It is able to turn electrical current on and off, thus allowing for the shaping of an electronic signal. This can be used in the design of amplifiers, audio systems and other types of electronic equipment.The working principle of a transistor can be described as follows. A transistor consists of three terminals – the base, collector and emitter. When a small current is applied to the base, a large current is able to flow between the collector and emitter. This is because the base voltage affects the base-emitter junction in such a way that it allows a large current to flow when the base voltage rises above a certain threshold. As the current flowing through the collector-emitter junction increases, the voltage at the base decreases. This allows the current to be regulated and the current flow can be controlled by the voltage applied to the base.This is the working principle behind transistors such as the BCR 162T E6327. By controlling the current flow, transistors are able to shape and amplify electronic signals. This allows for the design of a variety of sophisticated electronic systems.The BCR 162T E6327 is a pre-biased device, meaning that it is already set up to conduct current in a certain way. This allows designers to save time, as they don’t have to configure the device to work correctly. This also reduces the risk of circuitry errors, as the pre-set parameters reduce the chances of an incorrectly set up transistor.
The specific data is subject to PDF, and the above content is for reference
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