
Allicdata Part #: | BCR199TE6327-ND |
Manufacturer Part#: |
BCR 199T E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS PNP 250MW SC75 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 70mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | PG-SC-75 |
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BCR199T E6327 is a type of single pre-biased bipolar junction transistor (BJT). It is mainly used in amplifiers, switching circuits and various other electronic circuits Control.
Function and Application of BCR199T E6327
The BCR199T E6327 is an NPN-type transistor that is commonly used in applications such as amplifier circuits, switching circuits, and various other circuits that require reliable operation. It has a wide frequency range and is suitable for high-frequency applications. This makes it an excellent choice for audio, RF and telecommunication designs. The BCR199T E6327 also offers good power dissipation capabilities and a low noise figure, making it an ideal choice for applications requiring a low-noise operation. Additionally, the transistor is capable of high switching speeds and is suitable for high-voltage applications.
Working Principle of BCR199T E6327
The BCR199T E6327 is an NPN-type transistor, which consists of three terminals: the Emitter, the Base, and the Collector. The transistor works based on the principles of the flow of electrons between these terminals as a result of the potential differences produced by the applied input signals. When the input voltage is applied to the Base-Emitter junction, the junction becomes forward-biased, and electrons start flowing from the Emitter to the Base. This causes the Base-Collector junction to become reverse-biased. The electrons thus flow from the Collector to the Emitter, in a process known as current re-flow. This flow of electrons from the Collector to the Emitter forms the output current of the transistor.
The combination of the base-emitter and base-collector junction in the BCR199T E6327 creates a gain factor known as the Common Emitter Current Gain (referred to as hFE ), which is used to determine the transistor’s maximum current sinking capacity. The maximum hFE of the BCR199T E6327 is usually 250mA. The current gain may also vary depending on the applied input voltage and the temperature of the device.
Conclusion
The BCR199T E6327 is an excellent choice for amplifiers, switching circuits and various other electronic applications. It offers excellent performance, reliability, and power dissipation, enabling it to be used in a wide range of applications and environments.
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