BCR 22PN H6727

DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 5mA, 5V
Base Part Number:	BCR22PN
Supplier Device Package:	PG-SOT363-6
Package / Case:	6-VSSOP, SC-88, SOT-363
Mounting Type:	Surface Mount
Power - Max:	250mW
Frequency - Transition:	130MHz
Current - Collector Cutoff (Max):	--
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	22 kOhms
Resistor - Base (R1):	22 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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BCR 22PN H6727 is a pre-biased Bipolar Junction Transistor (BJT) Array produced by a leading semiconductor company that specializes in providing highly efficient digital systems for a multitude of applications. It is a three-layer integrated circuit made up of three individual PNP transistors that are connected in parallel. It has a package size of just 4mm x 1.27mm and a height of 0.9mm. The unique three-layer configuration of the BCR 22PN enables it to realize a wide range of applications and benefits that the other BJT arrangements cannot provide.BCR 22PN H6727 is designed to provide a high speed switching solution in high power applications and is suitable for driving heavy loads. The three PNP transistors are connected in such a way that they can be driven separately. This enables the transistor to produce very high current levels and make it an ideal choice for applications such as power amplifiers, motor control, and linear drives. Additionally, these transistors can also be used in low-noise applications as they provide a low output impedance and a low level of leakage current.The primary benefit of the BCR 22PN H6727 is the fact that it is a pre-biased BJT Array, meaning that it requires only a single external resistor to bias the current through the transistors. This reduces both the amount of complexity required to drive the transistors and the cost of the components used. As a result, the 22PN is able to provide a highly efficient solution in many applications. Additionally, the design also allows for shutdown capability between each transistor, making it ideal for applications where low power consumption is a must.The BCR 22PN also offers benefits in terms of speed, as the three transistors can be driven independently, allowing for faster switching of the transistors. This makes the 22PN H6727 highly suitable for low-noise switching and linear drive applications. Additionally, the transistor has a good thermal performance, helping to reduce the amount of heat generated by the device.The working principle behind the BCR 22PN is fairly simple and based on the concept of biasing. Biasing is the process of applying a fixed voltage to the base of a transistor, which allows the current in the device to be regulated. The 22PN features a built-in resistor chain that allows for a precise regulation of the amount of current flowing through the transistors. When the base voltage of the outer transistors is adjusted, the voltage of the inner transistors is also adjusted, allowing for a uniform current flow across all three transistors. This ensures a highly reliable performance that is suitable for a wide range of applications.In conclusion, the BCR 22PN H6727 represents a highly efficient and reliable BJT array solution for a broad range of applications. This device offers a number of unique benefits compared to other pre-biased BJT arrays, including the ability to easily bias transistors, high power output, low noise operation and the ability to switch faster. Additionally, its small footprint makes it ideal for applications where space is a concern.

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