Allicdata Part #: | BD157STU-ND |
Manufacturer Part#: |
BD157STU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 250V 0.5A TO-126 |
More Detail: | Bipolar (BJT) Transistor NPN 250V 500mA 20W Throu... |
DataSheet: | BD157STU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 250V |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | 100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 50mA, 10V |
Power - Max: | 20W |
Frequency - Transition: | -- |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-126 |
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Introduction
BD157STU is a Si/SiGe NPN transistor, designed to deliver superior performance in high frequency saturated and linear applications. This device is designed for use in switching and linear applications in the industrial and automotive (AEC-Q101 qualified) range. It is available in various TO-254 and industry-standard leadforming configurations.
Application Field of BD157STU
The BD157STU is mainly used in radio-frequency amplifiers, automotive switches, relays, and battery protection devices. It is also widely used in applications like DC-DC converters and medical control circuits, where high-frequency performance is required. This device is also suitable for other applications like AM/FM front-ends and low-power transmitters.
The excellent performance of the device makes it suitable for a wide range of applications, from industrial to automotive. It is capable of delivering superior power gain and switching performance. The device is designed to run at relatively high voltage, so it can be used in relays, buzzers, and RF power amplifiers. For example, in the automotive industry, it can be used in automotive switches to control various components.
Working Principle of BD157STU
The working principle of the BD157STU is based on the transistor action. It is an NPN transistor, which means that two P-type regions are separated by a N-type region. In the operation of the device, the "base" region (the N-type) is biased. This results in a current flow between the base and the collector. The current flow from the collector to the emitter is proportional to the base current.
The BD157STU is also capable of operating in linear mode. In this mode, the relationship between the collector current and the base current is more complex. The collector current is no longer proportional to the base current, but depends on the resistive feedback between the emitter and the collector. Therefore, the device can be used in applications where a linear response is needed.
The BD157STU is an excellent choice for high frequency switching and linear applications. It can deliver superior performance in the industrial and automotive range. The device is also suitable for a wide range of applications, from AM/FM front-ends to low-power transmitters. Its excellent power gain and switching performance make it a popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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