BD159G

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	350V
Vce Saturation (Max) @ Ib, Ic:	--
Current - Collector Cutoff (Max):	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 50mA, 10V
Power - Max:	20W
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-225AA
Base Part Number:	BD159

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Introduction

BD159G is a single bipolar junction transistor (BJT), a type of device used in the field of consumer, industrial and automotive electronics. It is a high-power transistor, with a 50-Watts maximum power rating and a Vce(sat) of 2 V. It is a highly reliable component, utilizing advanced technologies and design to ensure stable performance and long-term life.

Application Field and Working Principle

BD159G is mainly used in amplifier circuits and power switching applications, such as driving motors and other load-switching applications. It is used in consumer and industrial applications alike and is capable of handling high voltage and current requirements.BD159G works on the principle of bipolar junction transistors, which essentially consists of two P-N junction diodes arranged in a four-layer configuration. It has controlled current and voltage abilities and can both (switch) and amplify signals in circuits, depending on its operating mode. In saturation operation, the transistor behaves essentially as a switch with a low resistance between the emitter and collector and a high resistance between the base and collector. On the other hand, at cut-off, maximum resistance is present between the collector and emitter, and the current flowing is almost nil. In linear active region operation, the BD159G can act as a voltage gain amplifier, facilitating variable control of current flow from the emitter to the collector terminal. It can incrementally increase or decrease current without any drastic changes in its output.

Features and Specifications

The BD159G features a wide range of features and specifications suited for a variety of applications. It has a high-power rating of 50 Watts, and can handle a peak collector current of 7.8 Amps and a DC collector current of 5 Amps. Other features include a high breakdown voltage of 1200V and a maximum collector-emitter voltage of 800V. It is capable of a maximum current gain of hFE 85 and a Vce(sat) of 2 Volts, making it an ideal device for high-power switching operations.

Conclusion

The BD159G Single Bipolar Junction Transistor is a highly reliable and performance-driven device, and offers a wide range of features for a variety of applications. Its power rating, high peak and DC current capabilities, and a high current gain make it an ideal choice for amplifier circuits and power switching applications. Its long-term reliability and robust design ensure that it can be used without fail for many years.

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