BD159 Allicdata Electronics
Allicdata Part #:

BD159-ND

Manufacturer Part#:

BD159

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 350V 0.5A TO-225
More Detail: Bipolar (BJT) Transistor NPN 350V 500mA 20W Throu...
DataSheet: BD159 datasheetBD159 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 350V
Vce Saturation (Max) @ Ib, Ic: --
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Power - Max: 20W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-225AA
Base Part Number: BD159
Description

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The BD159 is a type of bipolar junction transistor (BJT) that utilizes a single crystal silicon as a base. It is a member of the family of NPN (negative/positive/negative) transistors that are designed for use in amplifier circuits for applications ranging from audio to video, to radiofrequency (RF). It is versatile enough to be used in many other modern electronic applications as well. In this article, we will look at the BD159’s application field and working principle.

The BD159 is a power transistor capable of handling up to 15W of output power. It has a base-emitter voltage of 8V, a collector-emitter voltage of 12V, a maximum collector current of 6A, and a maximum DC current gain of 120. It is suitable for use in audio amplifiers, motor control circuits, power supplies, and a wide range of switching applications. The BD159 is also capable of handling signals at up to 500MHz, making it suitable for RF applications.

The BD159’s working principle is based on the fact that when a voltage is applied to the base of an NPN transistor, it will cause the electrons in the base to move into the collector region, leaving the base and emitter regions with a net positive charge. This then allows for current to flow through the collector and emitter regions. The BD159 is no different. It relies on the same principles and, as such, can be used in many different applications.

The BD159 is a great option for amplifier applications. It has good current-to-voltage conversion characteristics and can drive a high current load. This makes it well suited for audio amplifier application. It also has a large DC current gain, making it suitable for motor control and other applications where voltage gain is important. The BD159 also has wide bandwidth and is capable of handling signals at up to 500MHz, making it a great choice for RF applications.

The BD159 is also well suited for switching applications. Its high current gain and fast switching times make it a great choice for power supplies and other circuits where precise and fast switching is required. This makes the BD159 a great choice for use in applications where high frequency/high current switching is necessary.

The BD159 is a versatile transistor that can be used in a wide range of applications. It is a great choice for both audio and RF amplifier applications, but it is also well suited for motor control circuits and power supplies where precise and fast switching is required. It is also capable of handling a large number of signals at up to 500MHz, making it a great choice for use in RF applications.

In conclusion, the BD159 is an exceptionally versatile transistor that can be used in a wide range of circuit applications. It has excellent current-to-voltage conversion characteristics and can drive a high current load, making it well suited for audio and RF amplifier applications. It is also well suited for switching applications, thanks to its high current gain and fast switching times. It is a great option for circuits where high frequency/high current switching is necessary.

The specific data is subject to PDF, and the above content is for reference

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