BD159STU

Series:	--
Packaging:	Tube
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	350V
Vce Saturation (Max) @ Ib, Ic:	--
Current - Collector Cutoff (Max):	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 50mA, 10V
Power - Max:	20W
Frequency - Transition:	--
Operating Temperature:	--
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126
Base Part Number:	BD159

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Introduction
The BD159STU is a single NPN bipolar transistor (BJT) transistor. It is used in a variety of electronic circuitry and is especially suitable for high power switching applications. The BD159STU is available in 4-pin through-hole as well as surface-mount packaging. The BD159STU is ideal for applications requiring low power consumption and high reliability.

Features
The BD159STU bipolar transconductor has several features that make it highly efficient and reliable for use in high power switching applications. It offers high maximum junction temperature range (up to 150°C), good thermal stability, and excellent noise suppression. It is also designed to prevent breakdown voltage distortion. Other features include low on-state resistance and improved collector-emitter saturation, making it ideal for applications such as inverter circuits and audio frequency amplifiers.

Design
The structural design of the BD159STU is based on a vertical structure and it has a gate oxide layer between the emitter and gate. It also features a silicon nitride isolation layer which provide good thermal stability and a hermetically sealed surface for improved reliability and moisture resistance. The collector of the BD159STU, which is connected to a substrate, is designed to reduce noise, distortion and saturation. The structure of the transistor is composed of a P-type region around the gate and an N-type region in the base and collector.

Application
The BD159STU bipolar transistor is suitable for use in a variety of electronic circuitry, especially in high power switching applications. It can be used in power amplifiers, power supplies, signal amplifiers, audio frequency amplifiers and inverters. The transistor is also used in signal generation and conditioning circuits, as well as inverter designs.

Working Principle
The working principle of the BD159STU transistor is based on the changes in current through the transistor. When a voltage is applied to the gate of the transistor, current is allowed to pass through the base-emitter junction. This causes the collector to become more positive, which causes current to flow from the collector to the emitter. The current through the collector of the transistor is limited by the resistance between the collector and the emitter. As the collector current increases, the collector voltage decreases. This decrease in voltage is known as voltage saturation, and this is the basic working principle of bipolar transistors.

Conclusion
The BD159STU is a single NPN bipolar transistor (BJT) transistor. It has several features that make it ideal for high power switching applications, such as low on-state resistance and improved collector-emitter saturation. The device is suitable for use in a variety of electronic circuitry and is especially suitable for power supplies and signal amplifiers. The working principle of the device is based on the voltage saturation of the collector when current is allowed to pass through the base-emitter junction.

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