BD651-S

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The BD651-S transistor is a particularly versatile type of single-bipolar transistor that can be used in a range of applications and can serve a variety of functions. It is particularly suitable for audio amplifiers and pre-amplifiers, power amplifiers and some specialized military or aerospace applications.

The BD651-S is a large-signal NPN transistor with a collector-emitter voltage of up to 25 Volts, a collector current of up to 1.5 Amps and a minimum off-state current of 50 μA. It is constructed from silicon and is housed in a TO-3 package which is designed for ease of use, with three terminals for power, ground and base connections. The device is designed for low-noise operation, with just 0.5 nV/√Hz input noise voltage and 0.3 nV/√Hz input noise current.

The working principle of the BD651-S can be divided into two distinct stages. Firstly, there is the forward-bias stage, which occurs when a voltage is applied to the base-emitter junction. This causes a current to flow through the junction, producing a transistor action known as ‘emitter current conduction’. In this stage, the transistor can be used as an amplifier, by controlling the current flow and amplifying the signal.

The second stage of operation is the reverse-bias stage, which occurs when a voltage is applied to the collector-base junction. In this case, no current flows through the junction, but instead the junction capacitance decreases, meaning that the current is effectively stored and can be released rapidly as a pulse. The combining of both stages allows for a range of applications and can be used for pulse width modulation or power switching. It is also widely used in feedback amplifiers, as the reverse-bias stage can help to reduce noise levels.

The BD651-S transistor is widely used in many applications, such as audio amplifiers, pre-amplifiers, power amplifiers, military and aerospace applications, and even some wireless applications. It is noted for its versatility, high voltage and low noise operation, and its ability to be used in both forward and reverse-bias modes. For these reasons, it is an ideal choice for use in many circuits and devices.

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