BD6562FV-LBE2 Integrated Circuits (ICs) |
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Allicdata Part #: | BD6562FV-LBE2TR-ND |
Manufacturer Part#: |
BD6562FV-LBE2 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | IC DVR IGBT/MOSFET 2CH 16SSOP |
More Detail: | Low-Side Gate Driver IC Non-Inverting 16-SSOPB |
DataSheet: | BD6562FV-LBE2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Driven Configuration: | Low-Side |
Channel Type: | Independent |
Number of Drivers: | 2 |
Gate Type: | IGBT, N-Channel, P-Channel MOSFET |
Voltage - Supply: | 10 V ~ 25 V |
Logic Voltage - VIL, VIH: | -- |
Current - Peak Output (Source, Sink): | 600mA, 600mA |
Input Type: | Non-Inverting |
Rise / Fall Time (Typ): | -- |
Operating Temperature: | -25°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 16-LSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 16-SSOPB |
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BD6562FV-LBE2 Application Field and Working Principle
The BD6562FV-LBE2, or "BD6562" for short, is an integrated circuit from Sanken Electric\'s BD65xx family. This series is composed of precise, multi-channel gate drivers for controlling power transistors, including metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors (IGBTs). This specific device contains two independently controllable channels that feature low on-resistance, a wide operating temperature range, high-speed, protect functions, circuit protection and over-voltage protection.
The BD6562 is classified in the PMIC - Gate Drivers family. This classification implies the device is used to control the voltage and/or current of components in power management systems that also use FETs and IGBTs as switches. The BD6562 gate driver is fabricated using BiCD (Bipolar-CMOS-DMOS) process technology, and is available in 10-pin or 14-pin packages to support effective and efficient mounting for surface-mounted components.
Working Principle
The BD6562 is primarily used to drive FETs and IGBTs. FETs are voltage-controlled devices, so the BD6562 is configured to supply the low on-resistance required for driving FETs. For this application, the BD6562’s gate driver is designed with an optimized level shifter circuit to maximize efficiency. Its patent-pending CAN Driver Internal Capacitance (CDIC) boost circuit can increase the drive capability of the low side MOSFET by 10%, further improving performance and lowering losses. Additionally, the BD6562 has several features to control FETs and IGBTs, including a floating voltage divider, sensing resistor, and high-speed switching speed.
In addition to providing precise gate driving of FETs and IGBTs, the BD6562 also has protection functions to ensure the device is used safely and effectively. This includes over-voltage protection for the output of its sensing resistor, current limiting (resistor or diode), and pre-discharge of the collector. By controlling the pre-discharge voltage, the BD6562 can reduce the surge current generated by FETs or IGBTs. The BD6562 is also capable of detecting an open or short circuit in an external circuit, and includes an external fault detect (EFD) output for use in protection systems.
To ensure that the BD6562 gate driver functions well in automotive applications, Sanken Electric designed the device with a wide operating temperature range, high-speed operation, and a low Standby Current (Icc). The BD6562 is available in a 10-pin or 14-pin packages, enabling efficient surface mounting of components. It also complies with AEC-Q100 Automotive Quality Standard.
Conclusion
The BD6562FV-LBE2, a precision, multi-channel gate driver from Sanken Electric, is designed to drive FETs and IGBTs. It features a low on-resistance for enhanced efficiency, high-speed switching performance, and circuit protection for safety. The device also has a wide operating temperature range, a low Standby Current (Icc), and complies with AEC-Q100 Automotive Quality Standard. As a GMIC - Gate Drivers device, the BD6562 is ideal for applications in automotive and other power management systems that require precise and efficient control of FETs and IGBTs.
The specific data is subject to PDF, and the above content is for reference
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