BDW23ATU

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	6A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	3V @ 60mA, 6A
Current - Collector Cutoff (Max):	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	750 @ 2A, 3V
Power - Max:	50W
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Base Part Number:	BDW23

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IntroductionThe BDW23ATU is an NPN bipolar, also known as Bipolar Junction Transistor (BJT), type of transistor, which is usually fabricated using a combination of two materials, such as silicon and germanium. This type of transistor has gained much popularity in the recent years due to its unique advantages, such as low switching time, low power consumption and cost-effectiveness. Moreover, BJTs have a wide range of applications, such as in amplification, switching, signal modulation and data transmission. Overview of BDW23ATUThe BDW23ATU is a low voltage, low power, fast switching, NPN bipolar junction transistor, designed by Toshiba. This device is specifically suited to low power applications. It has a current capacity of 200 mA and its viability to operate at low voltage makes it an attractive option for those who are looking to reduce their energy consumption.It comes in three different packages: a 4-pin Surface Mount (SMT), a 3-pin Through Hole (THT), and a 2-pin SOT-23. The SMT package is recommended for applications requiring compact size, fast switching and a low profile, as it is low in profile and is well suited for use in high density circuit boards. The THT and SOT-23 are designed for tasks where space is limited and where lower voltages are required. Working Principle of BDW23ATUThe BDW23ATU works on a principle called the NPN transistor operation. In this type of transistor, electrons flow from the emitter to the base and then to the collector, creating a switch. When the base-emitter junction is held in a forward-biased state, electrons flow from the emitter to the base and then to the collector, generating a small current in the process. This current can then be increased by increasing the magnitude of the base-emitter junction’s forward bias. The current gain for the NPN transistor is usually defined as the current output divided by the current input. Thus, higher current gain helps achieve greater power transfer efficiency in the transistor and is an important feature that helps the device to serve a variety of functions. ApplicationsGiven its low voltage and low power consumption, the BDW23ATU is a popular transistor for a number of applications. Here are some of the most common ones. Audio Amplifiers: The BDW23ATU can be used in audio amplifiers, where it is responsible for amplifying the audio signal coming in before sending it to the speakers. It is also used in volume, bass and treble controls, where it helps to adjust the tone of the audio. Switch: The transistor can serve as a switch that can rapidly change its output state in response to an input signal. This makes it perfect for use in applications where precision and speed is necessary, such as in computers, as well as in automotive and control systems. Timers: The BWD23ATU can also be used to delay the input signal by a set amount of time, thus allowing for precise timing in the circuits it is used in. It is a useful feature in applications that require precise timing, such as in the timer circuits in machines and home appliances. Voltage Regulators: The transistor can also be used in voltage regulator circuits to maintain a steady voltage output. This is useful for ensuring that the voltage output does not exceed the specified range and prevents any damage that may occur due to over voltage. ConclusionThe BDW23ATU is a low voltage, low power, fast switching NPN bipolar junction transistor, designed by Toshiba. Its excellent current capacity and low profile make it attractive for applications that require low power and fast switching. Its unique advantages include low switching time, low power consumption, and cost-effectiveness. Popular applications include audio amplifiers, switches, timers and voltage regulators.

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