Allicdata Part #: | BDW24TU-ND |
Manufacturer Part#: |
BDW24TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 45V 6A TO-220 |
More Detail: | Bipolar (BJT) Transistor PNP 45V 6A 50W Through H... |
DataSheet: | BDW24TU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 6A |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 60mA, 6A |
Current - Collector Cutoff (Max): | 500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 750 @ 2A, 3V |
Power - Max: | 50W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Base Part Number: | BDW24 |
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It is important to understand the application fields and working principle of the BDS24TU model in order to ensure the proper functioning of a Bipolar (BJT) Single. Take the model BDS24TU as an example, this transistor is designed to drive automotive control applications that require moderate or high power, such as power relays, starter motors, and lighting control. The model is also suitable for motion control applications such as servo motors and robotics.
The BDS24TU model is a complementary NPN and PNP silicon epitaxial planar type transistor. The NPN type is formed with a double-diffused base, a mesa structure, and a silicon layer epitaxial layer. On the other hand, the PNP type is built with the same diffusion technology used in the NPN. The package of the model consists of reinforced plastic with a flame retardant rating of UL 94V-0.
The working principle of this model is based on the movement of electrons by diffusion. When a current is supplied, electrons diffuse across the collector-base junction and create an emitter current. This current is amplified by a voltage gain, which is proportional to the base current. So, the higher the voltage gain, the higher the emitter current. The BDS24TU transistor also has a collector-gain capacity of up to 300mA. This ensures that the type can provide high-power output signals.
The model has a maximum rating of 30 V for the collector-base junction but can be used up to 45V if the base-emitter voltage is kept between 0.4V and 0.7V. The power dissipation rating for this device is over 75 W at 25°C. The collector-base breakdown voltage is also rated at over 100 V and can handle up to 1A at 25°C. It is also designed to have great noise immunity and a relatively low noise figure.
In conclusion, the application field and working principle of the BDS24TU model have been discussed. This model is suitable for automotive control, motion control, and other applications that require high power output signals. As previously mentioned, the model is a double-diffused type with a mesa structure and a plastic package. The working principle is based on the movement of electrons by diffusion. The model has a maximum rating of 30V, allow it to handle up to 1A at 25°C. Besides, it also provides excellent noise immunity and low noise figure. With the main features described, the BDS24TU model can easily meet the demands of high-performance applications.
The specific data is subject to PDF, and the above content is for reference
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