Allicdata Part #: | BDW24-S-ND |
Manufacturer Part#: |
BDW24-S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Bourns Inc. |
Short Description: | TRANS PNP DARL 45V 6A |
More Detail: | Bipolar (BJT) Transistor PNP - Darlington 45V 6A ... |
DataSheet: | BDW24-S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP - Darlington |
Current - Collector (Ic) (Max): | 6A |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 60mA, 6A |
Current - Collector Cutoff (Max): | 500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 750 @ 2A, 3V |
Power - Max: | 2W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
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The BDW24-S is a single, high-speed, high-frequency NPN bipolar transistor. It is capable of dealing with high voltage and current spike applications, allowing for high-speed switching and applications where power transfer needs to be optimized.
This type of bipolar transistor is also great for power management applications. It can boost or reduce voltage levels for efficient use in devices that require large amounts of current. It is also capable of relatively low power grinding or switching.
The BDW24-S has a voltage range of 4 to 25 volts and can handle power levels up to 100 Watts. This allows for a wide range of applications from low-power, low-frequency switching to high-power, high-frequency switching. It can even be used in high-temperature applications and is capable of operation up to 200°C.
The BDW24-S is a general-purpose transistor and is great for applications such as motor control, LED lighting, power switching, RF switching, and audio amplifiers. It can also be used in power conversion and pulse shaping applications.
The working principle of the BDW24-S involves the use of two transistors, one PNP and one NPN. It works by using the base-emitter junctions of the two transistors. When a voltage is applied to the base of the transistor, it causes the current through the base-emitter junction to move. This then generates a voltage across the collector-emitter junctions, creating a current in the collector. This current is then available to be used as the output of the BDW24-S.
The BDW24-S is a versatile and reliable transistors and is capable of creating all types of different operations depending on the specific application. It is great for all types of high-frequency applications and can provide a low power and reliable power management solution.
The specific data is subject to PDF, and the above content is for reference
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