BDW24ATU

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	6A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	3V @ 60mA, 6A
Current - Collector Cutoff (Max):	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	750 @ 2A, 3V
Power - Max:	50W
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Base Part Number:	BDW24

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BDW24ATU Transistor

The BDW24ATU transistor is a high voltage NPN bipolar junction transistor (BJT) designed to operate at medium to high frequencies. The device features a double polysilicon gate process and a monolithically integrated NPN transistor structure designed for high-speed switching, such as in television, microwave, telecommunication and remote control applications.

Features of the BDW24ATU

The device has a wide range of features that make it suitable for many different applications. These features include:• Maximum collector-emitter voltage: 1000V
• Maximum collector-base voltage: 650V
• Maximum emitter-base voltage: 6V
• Maximum collector current: 0.2A
• Number of Pins: 3
• Junction Temperature: -200 to +250C

Applications of the BDW24ATU

The BDW24ATU is widely used in a variety of applications, including:• High speed switching
• Motor control
• Driver circuits
• Logic circuits
• Low speed switching
• Audio amplification
• High-frequency circuits
• Computer equipment
• Television applications
• Telecommunications equipment

Working Principle of the BDW24ATU

The BDW24ATU is a NPN bipolar junction transistor (BJT). It works by combining two diodes in one junction. When one of the diodes is forward biased and the other reverse biased, the combination is equivalent to a transistor. The two diodes are not physically connected, but are created by a process known as charge-carrier injection.When current flows through the base-emitter junction, a base current is created, which in turn causes an increase in the collector current. This is due to the increase in mobile electrons in the collector, which creates the transistor action.The BDW24ATU is a high performance device with a high power rating and high switching speed. The device is also designed to be thermally stable and has a built-in thermal protection diode, thus making it highly reliable.

Conclusion

The BDW24ATU is a versatile, highvoltage bipolar junction transistor (BJT) designed for medium to high frequencies. Its wide range of features and its ability to operate at both medium and high speeds make it ideal for a wide variety of applications, from switching circuits to audio amplification and from computer equipment to telecommunication and television applications. Its double polysilicon gate process and monolithic NPN transistor structure enable the device to provide high performance and reliability.

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