BDW53-S Allicdata Electronics
Allicdata Part #:

BDW53-S-ND

Manufacturer Part#:

BDW53-S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Bourns Inc.
Short Description: TRANS NPN DARL 45V 4A
More Detail: Bipolar (BJT) Transistor NPN - Darlington 45V 4A ...
DataSheet: BDW53-S datasheetBDW53-S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 4V @ 40mA, 4A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

With the continuous development of electronic equipment, more and more electronic equipment has gradually entered the field of people\'s lives. In order to meet the more and more diverse needs, the relevant technology has been constantly innovating. Transistors are an important part of electronic components and play an important role in electronic applications. Among them, single-unit bipolar (BJT) transistors, such as BDW53-S, are widely used in various types of circuits.

BDW53-S is a kind of high-performance transistor, which has high collector current, high speed and high operation frequency. Its collector-emitter breakdown voltage is about -65V, and its collector-base breakdown voltage is about -90V. It adopts bevel design, which is almost twice the area of the traditional device, making it more efficient and reliable.

The BDW53-S is suitable for use in various circuits, such as switching circuits, chopper circuits, high frequency transistor oscillators and so on. The operating frequency of the BDW53-S is as high as 140 MHz, and the current gain is wide, up to a maximum of 40. At the same time, this kind of transistor has relatively low power consumption and can provide sufficient current flow.

In addition, the BDW53-S also has a very small input impedance and a large output impedance, which can be suitable for using in amplifying circuits, driving motors, and amplifying audio signals, etc. For example, in a motor driving circuit, BDW53-S can be used as an amplification element to drive the motor, so as to make the motor have a better speed regulation performance. In an amplifying circuit, it can be used to boost the signal before the audio signal is output through the device.

As for the working principle of BDW53-S, it is mainly based on the bipolar junction transistor (BJT). The BJT is composed of three parts: the base, collector and emitter. Inside the BJT, the positive charge is separated from the negative charge, forming two P-N junctions. When a small current flows into the base, it will "open" the two P-N junctions, so that a relatively large current can flow between the collector and emitter. This kind of transistor can be used in different types of circuit according to the purpose, achieving the purpose of signal or power amplification.

To summarize, BDW53-S is a kind of high-performance BJT with wide gain, high speed and high operating frequency, which is suitable for use in various applications. Its working principle is based on the structure of BJT, so as to achieve signal or power amplification. Therefore, it can be used to drive the motor, amplify the signal and so on.

The specific data is subject to PDF, and the above content is for reference

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