BDW53C-S

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	4A
Voltage - Collector Emitter Breakdown (Max):	100V
Vce Saturation (Max) @ Ib, Ic:	4V @ 40mA, 4A
Current - Collector Cutoff (Max):	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	750 @ 1.5A, 3V
Power - Max:	2W
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220

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Introduction

BDW53C-S (also known as 2SC6087) is a bipolar junction transistor. It is a single-transistor device, meaning it has two semiconductor layers or "junctions" (the one between emitter and base, and the one between collector and base). It can be used for many different functions, including amplification, switching, and even radio frequency (RF) signal control.

Typical Applications

BDW53C-S transistors are commonly used in various electronic applications, such as amplifiers, comparators, motor controllers, switching circuits, and other digital components. They can also be used in RF circuits, such as RF amplifiers, receivers, and transmitters. They are frequently used in the audio frequency (AF) range, specifically for power amplification and the generation of high frequency signals.In addition, BDW53C-S transistors can also be found in automotive applications such as ignition circuits, engine ignition systems, and radio systems.

Device Characteristics

BDW53C-S transistors have a maximum collector-emitter voltage (Vce) of 55V and a maximum collector current (Ic) of 1.5 A. They have a low collector-emitter saturation voltage (Vce(sat)) and a low operating current (Ic). The device has a low-noise characteristic, making it well suited for RF circuits. BDW53C-S transistors can also be used in low frequency (LF) circuits due to their low-noise performance.

Working Principle

BDW53C-S transistors work as a two-junction semiconductor device. In the device, the emitter-base junction forms an N-type semiconductor material, while the collector-base junction forms a P-type semiconductor material. When a small current is applied to the base, controlling the overall transistor current, the collector-emitter current (in the N-type material) is changed. This change in collector-emitter current is known as current amplification.This concept of current amplification is widely used in many electronics applications. The amount of current amplification achieved depends on the ratio of the device\'s base width to its emitter width. As such, engineers and designers choose transistor devices with high gain for higher performance.

Compatibility

BDW53C-S transistors are compatible with many types of circuit boards and systems. They can be used alongside other discrete components, such as capacitors, resistors, and diodes. They are also compatible with many types of integrated circuits.

Conclusion

BDW53C-S transistors are bipolar junction devices commonly used in many different types of electronics applications. They are especially useful in RF circuits, amplifiers, and switching circuits due to their low-noise characteristic. The device has relatively high-performance, with a maximum collector-emitter voltage of 55V and a low collector-emitter saturation voltage. BDW53C-S transistors are also compatible with many types of integrated circuits and circuit boards.

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