BDW54C-S Allicdata Electronics
Allicdata Part #:

BDW54C-S-ND

Manufacturer Part#:

BDW54C-S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Bourns Inc.
Short Description: TRANS PNP DARL 100V 4A
More Detail: Bipolar (BJT) Transistor PNP - Darlington 100V 4A ...
DataSheet: BDW54C-S datasheetBDW54C-S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 4V @ 40mA, 4A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Description

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Transistors, broadly speaking, refer to an electronic device that can control current, voltage and power with only a small input current or voltage. Bipolar Junction Transistor (BJT) refers to a three-terminal electronic device composed of two p-n-junctions. It flows current between two terminals by controlling the current between the two other terminals, and is used to amplify current and switch electrical signals.

BDW54C-S are NPN transistors commonly used in electronic circuits, applications range from simple to complex. They are designed to switch on or off an electrical supply chain, providing an easy and economical way to control circuits. With their robust structures, these types of European transistors are perfect for commercial, industrial and home applications.

BDW54C-S can be used for low-power amplification, commutation, local and medium power switching, matrix work and direct transistor power conversion. These transistors can further be used in analog, communication, automotive and high temperature applications. The enhancement type has a voltage gain ranging from 45 to 200, with a minimum gain of 200 when operated at a voltage of 1.2v. The DC current gain is 1000 to 1500.

As for their working principle, the BDW54C-S transistors have three terminals. The first two terminals (known as the base and emitter) are connected to an NPN bi-polar junction, while the third terminal is attached to the collector. The bi-polar junction is made up of two heavily doped regions, an N-type and P-type region, which creates a depletion zone between them. They are also referred to as the PN junction.

When the base voltage is higher than the emitter voltage, the current flow through the two terminals is called the forward bias current. This current consists of the holes injected into the base by the collector, and the electrons injected into the emitter. If the current is increased, it increases the current flow through the base-emitter junction, allowing more electrons to be injected into the emitter. This process is what allows the BDW54C-S transistors to function as a current or voltage amplifier.

When the base voltage is lower than the emitter voltage, the current flow through the two terminals is called the reverse biased current. This current consists of electrons injected into the base by the collector, and holes injected into the emitter. This process is what allows the BDW54C-S transistors to be used as a switch, allowing current to pass when it is in a forward bias state, and stopping the current when it is in a reverse bias state.

The BDW54C-S transistors offer a wide range of applications, from simple to complex. They can be used as amplifiers, switches, voltage regulators, matrix work and direct transistor power conversion, making them versatile and reliable. Their robust structure, reliable performance, and low cost make them ideal for many commercial, industrial and home applications.

The specific data is subject to PDF, and the above content is for reference

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