Allicdata Part #: | BDW53A-S-ND |
Manufacturer Part#: |
BDW53A-S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Bourns Inc. |
Short Description: | TRANS NPN DARL 60V 4A |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 60V 4A ... |
DataSheet: | BDW53A-S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 4V @ 40mA, 4A |
Current - Collector Cutoff (Max): | 500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 750 @ 1.5A, 3V |
Power - Max: | 2W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
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The BDW53A-S is a bipolar junction transistor (BJT). It is classified as a “single” type device and is commonly used in audio amplifiers, power regulators, switching circuits and control circuits. This device features superior electrical characteristics, such as low saturation voltage, low leakage current and high gain. In addition, it has both common-emitter and common-collector configurations for use in a variety of applications.
The BJT is a type of semiconductor device that is based on the basic design of two PN-junction-type diodes connected in series. When a potential difference is applied across one of the diodes, it will become reverse biased, causing electrons to flow from the P-side (the collector) to the N-side (the emitter). This current flow creates a small electrical field between the base and emitter. As the voltage is increased, the current increases exponentially and a current saturates the base, turning the transistor on.
The BDW53A-S is an optimized bipolar transistor designed to provide exceptional performance in audio, power and control applications. Its output characteristics are optimized for low-voltage operation, low base-emitter saturation voltage and fast turn-on/turn-off times. It features a very low collector-emitter saturation voltage of 0.5V, a low collector-base leakage current of 200nA and a high gain of 300. The BDW53A-S provides excellent switch-mode performance and low operating power consumption.
In addition, the BDW53A-S has a high frequency response, making it suitable for RF switch-mode applications. The device can also be configured to use either common-emitter or common-collector circuits by simply removing the emitter and collector shorting pins, allowing the transistor to be optimized for either amplifier circuits or power-control circuits. The device is also RoHS compliant and available in surface mount package.
The BDW53A-S is a versatile transistor that can be used in a variety of applications, from audio amplifiers to switching and control circuits. Its optimized characteristics make it ideal for low-power operation, high-frequency response and fast switching times, making it a reliable and cost-effective solution for commercial and industrial applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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