BDW93B-S

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BDW93B-S is a voltage-controlled, lateral-diffused metal oxide semiconductor (LDMOS) transistor that is part of the bipolar junction transistor (BJT) family. The device is used in a variety of applications, including switching and amplifying electronic signals, as well as amplifying the radio-frequency spectrum. Its working principle is based on a flow of electrons through a junction between two semiconductors. The amount of current that flows is determined by the voltage applied across the junction.

The BDW93B-S device comes in a variety of configurations. It is available as a single device, a dual device, and a quadruple device. The single device features a voltage capacity of 50 volts and a Pulsed Collector Current (PCC) of 8.8 amps. The dual device features two transistors with a voltage capacity of 36 volts and a PCC of 6.2 amps. The quadruple device has four transistors with a voltage capacity of 36 volts and a PCC of 8.5 amps.

The device is specifically designed for use in high frequency applications. It has a high transition frequency (fT) of 27 GHz, a high frequency compression ratio (FCT) of 15 dB, and a high maximum frequency of oscillation (Fmax) of 30 GHz. These features make it well suited for applications such as switching, power amplifiers, and microwave circuits. Additionally, the device’s Drain-Source On (DSON) and Off (DSoff) voltages are 5.1V and -3.3V respectively, which makes it suitable for use in low-voltage control signals.

The BDW93B-S device is designed for use in telecommunications and broadband applications, as it features a high breakdown voltage of 94V and a low noise figure of 0.82dB. Its high-frequency performance also makes it suitable for use in automotive, radar, avionics, GPS, and satellite applications. Additionally, the device has a very small form factor and can be used in integrated circuits and other chip-based products.

The BDW93B-S device is popular in a variety of industries and applications due to its versatility. Its ability to handle a wide range of signal frequency types make it useful in a variety of applications. Its high speed and accuracy make it especially suitable for digital control and electronic communication. Its low-noise design makes it ideal for use in radio frequency (RF) applications. Its small form factor also allows it to be integrated into stacked IC chips, making it an attractive device for design engineers.

The working principle of the BDW93B-S is based on a junction between two semiconductors, with the amount of current flow determined by the voltage applied across the junction. The junction between the two semiconductors is created by the diffusion of their materials into each other, which creates an electric field between the two components. This electric field causes a current to flow from one semiconductor to the other, based on the voltage applied across the junction. Once the current has been established, it can be further manipulated by changing the voltage across the junction. The current that flows through the BJT can then be used to control the signal coming out of the device, either as amplifying or switching.

In summary, the BDW93B-S is a versatile, high-frequency transistor that is suitable for a wide range of applications. Its high transition frequency, high frequency compression ratio, high maximum frequency of oscillation, and low noise figure make it well suited for use in a variety of industries. The device has a small form factor, allowing it to be integrated into IC chips and other chip-based products. Additionally, its working principle is based on a junction between two semiconductors with the current flow determined by the voltage applied across the junction.

The specific data is subject to PDF, and the above content is for reference