BDW93C Allicdata Electronics

BDW93C Discrete Semiconductor Products

Allicdata Part #:

BDW93CFS-ND

Manufacturer Part#:

BDW93C

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 100V 12A TO-220
More Detail: Bipolar (BJT) Transistor NPN - Darlington 100V 12A...
DataSheet: BDW93C datasheetBDW93C Datasheet/PDF
Quantity: 290
Stock 290Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 12A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 5A, 3V
Power - Max: 80W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Base Part Number: BDW93
Description

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BDW93C is a type of single bipolar junction transistor (BJT) that is widely used in various applications in modern electronics. Its operating voltage range is between -2. 20V and –2. 95V, with a maximum reverse collector-emitter voltage of 20V. The maximum collector current is 350mA, with a minimum load current level of 5mA. The maximum DC power dissipation is 2W, and with a maximum storage temperature of 150°C.

The general purpose of the BDW93C is to amplify small signals in order to make them detectable. It is also able to supply high-current gain and large-current ratings, and also has good voltage regulation characteristics. It is a useful device for powering and controlling high-powered equipment.

Due to its high power capability and high-current ratings, the BDW93C is used for applications such as power amplifiers and switching power supplies, as well as for specialty analog applications such as active filters and audio amplifiers. It is also useful for instrumentation and control applications, such as servo motors and proximity sensors, and for communications equipment, such as modems and wireless networks.

The BDW93C works by using two p-type semiconductor layers, separated by an n-type layer. When an electric current is applied to one of the semiconductor layers, it forms what is known as a junction between them. This junction acts like a switch, and is able to carry out various functions depending on the type of current supplied and the amount of voltage applied to the junction.

When an n-type semiconductor layer is placed between two p-type layers and a current is supplied to the junction, the electrons in the first p-type layer move to the second p-type layer, while the holes in the second layer are attracted to the first layer. This causes a flow of current through the junction, which is known as the collector current. This current can then be used to amplify a signal that has previously been applied to the junction by using the base-emitter voltage, which is the difference in potential between the collector and emitter connections.

The BDW93C is a very efficient device, with a transfer ratio of 65% and a current gain of 110. It is also relatively resistant to temperature fluctuations, which makes it suitable for demanding applications that require high performance and reliability.

In summary, the BDW93C is a single bipolar junction transistor that is used for a variety of applications including power amplifiers and switching power supplies, for specialty analog applications, for instrumentation and control applications, and for communications equipment. It is a very efficient device with a high performance and a good temperature resistance, and is capable of supplying high-current gains and large-current switching operations.

The specific data is subject to PDF, and the above content is for reference

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