Allicdata Part #: | BDW94C-S-ND |
Manufacturer Part#: |
BDW94C-S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Bourns Inc. |
Short Description: | TRANS PNP DARL 100V 12A |
More Detail: | Bipolar (BJT) Transistor PNP - Darlington 100V 12A... |
DataSheet: | BDW94C-S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP - Darlington |
Current - Collector (Ic) (Max): | 12A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 100mA, 10A |
Current - Collector Cutoff (Max): | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 750 @ 5A, 3V |
Power - Max: | 2W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
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The BDW94C-S is a single bipolar junction transistor (BJT) that is ideal for use in amplifiers, oscillators, switch configuration and other applications. It can be used in both plastic and metal-can packages, offering a low-cost, reliable solution to all manner of applications. This device is commonly used as a small signal amplifier, switch and a couple of other applications.
The device is typically available in three package configurations, including a plastic package (TO-92), metal can (TO-126) and DIP (dual-inline-package). The BDW94C-S has a maximum current of 600mA, and a power dissipation of up to 1 Watt, making it suitable for applications where high power is needed. Its small size and low power dissipation allow it to be easily integrated into tight spaces. The BDW94C-S is also designed to be architecturally robust and reliable, making it an attractive choice for applications requiring a high level of reliability.
The principle of operation of the BDW94C-S is based on the basic operation of a BJT. It is a three-terminal solid-state device, consisting of three different layers. The outermost layer is called the emitter, and this is where the current is injected into the device. The middle layer is called the base, and this helps the emitter control the amount of current that is injected. Finally, the innermost layer is called the collector, and this is where the current exits the device. When placed in a circuit, the emitter is used to inject current which is then controlled by the base, producing an amplified current across the collector and emitter junctions.
The BDW94C-S is most commonly used as an amplifier, switch, oscillator, filter, and even an audio amplifier. The device is well suited for these applications due to its low power dissipation, small size, and high-level of reliability. Additionally, the device is capable of operating over a wide range of temperatures and is relatively insensitive to variations in temperature. This makes it well-suited for industrial and military applications that require high reliability in harsh environments.
In summary, the BDW94C-S is a single bipolar junction transistor (BJT) that offers a cost effective, reliable solution for a variety of applications. The device is well suited for use as an amplifier, switch, oscillator, filter, and even an audio amplifier. The device is designed to be architecturally robust and reliable, making it an attractive choice for applications requiring a high level of reliability. Additionally, the device is capable of operating over a wide range of temperatures and is relatively insensitive to variations in temperature.
The specific data is subject to PDF, and the above content is for reference
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