BDW93CFP Allicdata Electronics
Allicdata Part #:

497-12033-5-ND

Manufacturer Part#:

BDW93CFP

Price: $ 1.06
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN DARL 100V 12A TO-220FP
More Detail: Bipolar (BJT) Transistor NPN - Darlington 100V 12A...
DataSheet: BDW93CFP datasheetBDW93CFP Datasheet/PDF
Quantity: 939
1 +: $ 1.06000
10 +: $ 1.02820
100 +: $ 1.00700
1000 +: $ 0.98580
10000 +: $ 0.95400
Stock 939Can Ship Immediately
$ 1.06
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 12A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 5A, 3V
Power - Max: 33W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Description

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Bipolar junction transistors (BJTs) are prevalent in a variety of electrical and electronic systems, ranging from consumer goods to aerospace and defense applications. One particular type, the BDW93CFP, has a wide variety of uses and is notable for its high input/output impedance, high voltage and current gain, and low base-emitter voltage. This article will explore the general application field and working principle of the BDW93CFP.

The BDW93CFP is a silicon NPN transistor available in a four-lead, plastic medium-power surface mount package. It is designed for use in power switched circuits (up to 200 volts Collector Emitter Voltage) for switching and amplification applications. Generally, it is used as a signal amplifier with medium-power output, as well as in medium speed switching applications.

In terms of operating parameters, the BDW93CFP has a high DC current gain of 10,000, an allowable power dissipation of 200 mW, and total capacitance of 4.7 pF. It has a maximum collector-emitter voltage rating of 200V and collector-base voltage rating of 300V. As noted previously, its Input/Output impedance is noticeably higher than other BJTs, making it well-suited for amplifier and switching applications that demand higher impedance levels.

The working principle of BJT’s allows them to amplify signals or switch loads. A bipolar junction transistor has three leads in a single package. Of these, the base (B) lead is used to control the current flowing through the other two leads—collector (C) and emitter (E)—by the application of a base-emitter voltage. When the base voltage is increased, the current flowing through the collector and emitter increases, which is known as current gain. This happens due to the transistor’s charge balance property, where current travels from the collector to the base through the base-emitter junction.

In the case of the BDW93CFP, because of its high input/output impedance, the device could be well-suited for low-noise operations. This is because the transistor’s input/output impedance ensures that the input/output signal remains intact as it passes through the transistor. The high current gain also means that it can be used to amplify signals and switch loads. It is well-suited for medium power output applications, such as audio amplifiers and logic gates.

In conclusion, the BDW93CFP is a silicon NPN transistor that is particularly suitable for medium-power applications, such as switch circuits and for amplifying signals. It has a high current gain, which makes it ideal for these applications, and its high input/output impedance helps keep the input/output signals intact as they pass through the device. As such, it is a highly versatile and useful type of BJT that can be used in a variety of projects requiring medium-power switching and amplification.

The specific data is subject to PDF, and the above content is for reference

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