BF1005E6327HTSA1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	N-Channel
Frequency:	800MHz
Gain:	19dB
Voltage - Test:	5V
Current Rating:	25mA
Noise Figure:	1.6dB
Power - Output:	--
Voltage - Rated:	8V
Package / Case:	TO-253-4, TO-253AA
Supplier Device Package:	PG-SOT143-4
Base Part Number:	BF1005

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BF1005E6327HTSA1 Application Field and Working Principle

BF1005E6327HTSA1 is a type of field-effect transistor (FET) designed for use at radio frequencies (RF). A field-effect transistor is one of the main three types of transistors and is the most commonly used type of transistor for RF applications. FETs are used for amplification and switching and are advantageous for RF applications due to their lower noise figure, higher input impedance, and higher gain, compared to bipolar junction transistors (BJTs). FETs are also advantageous since they can be constructed to operate with very low voltage and are more resistant to breakdown in high temperature environments than BJTs.The BF1005E6327HTSA1 is a depletion-mode FET, which means it is normally "on" (conducting) when no gate bias is applied. It is also an enhancement-mode FET, which means it can be turned "on" or "off" depending on the voltage applied to the gate. The advantageous combination of both depletion and enhancement modes gives the BF1005E6327HTSA1 a wide range of applications including low noise amplifiers, attenuators, phase shifters, oscillators, switch circuits and noise sources.The BF1005E6327HTSA1 is a two-terminal FET, meaning it has two pins, the source and the drain. The source is the input and the drain is the output. The bias voltage is applied to the gate, which is between the source and the drain. The gate voltage controls the current flow between the source and the drain. When the gate voltage is zero (or the same as the source voltage), no current flows between the source and the drain. The current starts to flow when an opposite bias (voltage between the gate and source) is applied which raises the threshold voltage and the result is that the device is "turned on".In the "on" state, the FET acts like a resistor and the current will be proportional to the applied voltage. This is known as the ohmic region. In the ohmic region, the transfer characteristics of the FET can be represented by a straight line. In the cut-off region, the FET acts like an open circuit and no current flows. The FET will remain in the cut-off region until the gate voltage reaches the threshold voltage. This threshold voltage is set by the manufacturer and is usually somewhere between -0.1 to -1V.The BF1005E6327HTSA1 is a high-performance device and is ideal for use in various radio frequency applications. It has a low noise figure, high input impedance, and high gain. This makes it an excellent choice for low noise amplifiers, attenuators, phase shifters, oscillators, switch circuits, and noise sources.In conclusion, the BF1005E6327HTSA1 is a two-terminal field effect transistor designed for use at radio frequencies. It is a depletion/enhancement-mode FET and is advantageous for RF applications due to its low noise figure, high input impedance, and high gain. The device can be used in various radio frequency circuits including low noise amplifiers, attenuators, phase shifters, oscillators, switch circuits, and noise sources.

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