BF1005SE6327HTSA1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	N-Channel
Frequency:	800MHz
Gain:	22dB
Voltage - Test:	5V
Current Rating:	25mA
Noise Figure:	1.6dB
Power - Output:	--
Voltage - Rated:	8V
Package / Case:	TO-253-4, TO-253AA
Supplier Device Package:	PG-SOT143-4
Base Part Number:	BF1005

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BF1005SE6327HTSA1 is an RF application FET (Field Effect Transistor). It is a N-channel enhancement mode RF FET made from silicon while it has a built-in voltage regulator. PerformanceThis device is a power MOSFET that is specially designed for low-noise, low-voltage operation which makes it ideal for use in applications such as mobile phones and other wireless devices. It features a cut-off frequency of up to 2GHz, an output power of up to 9.5W, an power-added efficiency of 10-15% and a low drain-source on resistance of 1.2 ohm. This device also has very good thermal characteristics, which makes it ideal for applications that require very low thermal resistance or good high temperature performance.ApplicationsThe BF1005SE6327HTSA1 is ideally suited for use in a variety of radio applications, such as mobile phones and wireless networks. With its high cut-off frequency and power-added efficiency, it is particularly useful for applications such as CDMA, Wi-Fi and LTE networks. It is also suitable for use in other applications requiring a low drain-source on resistance, such as preamplifiers, modulators and power amplifiers.Working principleThe working principle behind this device is relatively simple. It uses an N-channel enhancement process where an applied gate-source voltage alters the physical channel between the drain and source within the transistor. This alteration allows more current to flow through the transistor and the change in current will be proportional to the gate voltage.Therefore, by altering the gate voltage, one can control the amount of current flowing through the device and in turn, adjust the output power. This makes this device ideal for applications where fine adjustments are needed, such as mobile phones and wireless networks.ConclusionIn conclusion, the BF1005SE6327HTSA1 is an ideal device for use in applications such as mobile phones and wireless networks. With its low-noise, low-voltage operation, high cut-off frequency, power-added efficiency and low drain-source on resistance, it is an ideal choice for those applications. Its N-channel enhancement process also allows for fine tuning of the output power, allowing for more precise control of the device when used in such applications.

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