BF512,235 Allicdata Electronics
Allicdata Part #:

BF512,235-ND

Manufacturer Part#:

BF512,235

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: JFET N-CH 20V 30MA SOT23
More Detail: RF Mosfet N-Channel JFET 10V 5mA 100MHz TO-236AB...
DataSheet: BF512,235 datasheetBF512,235 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: N-Channel JFET
Frequency: 100MHz
Gain: --
Voltage - Test: 10V
Current Rating: 30mA
Noise Figure: 1.5dB
Current - Test: 5mA
Power - Output: --
Voltage - Rated: 20V
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: BF512
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BF512,235 application field and working principle, better known simply as a RF MOSFET are technologies that are used in control of devices such as radio transmission, cell phones, and other communication equipment. In order to understand their wide application, some background information about MOSFET is necessary.

MOSFET is an acronym for metal-oxide semiconductor field effect transistors, and these devices are able to amplify signals and offer a variety of other exciting applications. They are considered by many to be the most important components in the development of semiconductor technology and are of great importance in the electronics industry. MOSFETs are a type of Field Effect Transistor, or FET, and they provide a way to control a large amount of current with a small amount of voltage. Unlike bipolar junction transistors, which require a current to be flowing to turn them on, MOSFETs are voltage-controlled transistors that require only a small voltage gate signal to turn them on or off. This makes them particularly suitable for use in RF circuits.

The BF512,235 application field and working principle are as follows. The device is built on a semiconductor material, such as Silicon or Germanium, and features three leads. These are Source, Drain, and Gate. The Source and Drain leads act as their names imply, allowing current to flow from the Source to the Drain. The Gate lead, however, is used to control the flow of current from the Source to the Drain. When a high enough voltage is applied to the Gate lead (more than the device’s Threshold Voltage), electrons are attracted from the metal gate and form a conducting channel through the semiconductor material. Current can thus flow from the Source to the Drain, enabling the device to act as an amplifier for RF signals.

The application field of BF512,235 is incredibly diverse. In the RF field, it is used in wide-band amplifiers, low-noise amplifiers, oscillators, switches, and transmitters. It is also used in the motor control and process control industries, as it is able to handle large currents with fast switching speeds. Finally, since the MOSFET offers high input impedance and low output impedance, it can be used to improve signal isolation between adjacent components.

To sum it up, the BF512,235 is a type of RF MOSFET, built with three leads – Source, Drain, and Gate. By applying a voltage to the Gate lead, electrons will travel from the metal gate and form a conducting channel between the Source and Drain, allowing current to flow and producing an amplified signal. As such, they are used in a wide variety of applications, including RF circuits, motor control, process control, and signal isolation.

The specific data is subject to PDF, and the above content is for reference

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