Allicdata Part #: | BF556C,215-ND |
Manufacturer Part#: |
BF556C,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | JFET N-CH 30V 18MA SOT23 |
More Detail: | RF Mosfet N-Channel JFET TO-236AB (SOT23) |
DataSheet: | BF556C,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel JFET |
Frequency: | -- |
Gain: | -- |
Current Rating: | 18mA |
Noise Figure: | -- |
Power - Output: | -- |
Voltage - Rated: | 30V |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Base Part Number: | BF556 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BF556C,215 is an RF MOSFET device, specifically designed for RF transistors applications. This device has very low gate-source and gate-drain resistance, so it can be used to switch signals with high frequency. It can also be used in amplifiers and other circuit topologies where power efficiency is important. In addition, it has a high current capability and is designed to be very robust in operation.
In terms of its application field, the BF556C,215 can be used for high frequency RF switching and amplification applications. This includes applications such as cordless handsets, GPS receivers, and other wireless products. Additionally, it can also be used in applications such as power amplifiers, switching power supplies, and digital-to-analog converters.
The working principle of the BF556C,215 is as follows. The gate is connected to the drain, and the source is connected to ground. When a voltage is applied between the gate and the drain, a channel is opened between the two, allowing electrons to flow from the drain to the source. This creates an electric field across the channel, which can be used to control the current flow between the drain and the source. This makes RF switching and amplification possible.
When it comes to its physical properties, the BF556C,215 is a surface mount device, which means it can be mounted in a printed circuit board directly. It also has a low gate-source and gate-drain capacitance, so it’s suitable for use in high-frequency applications. Additionally, it includes protection features, such as electrostatic discharge protection, to make sure that it’s not damaged by ESD.
Overall, the BF556C,215 is an RF MOSFET device that can be used for RF switching and amplification applications. It has a very low gate-source and gate-drain resistance, which makes it suitable for high-frequency applications. Additionally, it has high current capability and includes protection features such as electrostatic discharge protection. It is also a surface mount device, so it can be mounted on a printed circuit board directly.
The specific data is subject to PDF, and the above content is for reference
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