BF820W,135 Allicdata Electronics
Allicdata Part #:

1727-1192-2-ND

Manufacturer Part#:

BF820W,135

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN 300V 0.05A SOT323
More Detail: Bipolar (BJT) Transistor NPN 300V 50mA 60MHz 200mW...
DataSheet: BF820W,135 datasheetBF820W,135 Datasheet/PDF
Quantity: 10000
10000 +: $ 0.03262
30000 +: $ 0.03069
50000 +: $ 0.02878
100000 +: $ 0.02558
Stock 10000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Power - Max: 200mW
Frequency - Transition: 60MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Base Part Number: BF820
Description

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BF820W, a bipolar junction transistor (BJT), is a type of transistor comprising two p-type and one n-type materials. As such, it operates by applying a voltage between the two different materials, creating an electrical field which can be used to amplify, switch, or regulate power. As a single BJT device, it is used widely in a variety of applications such as audio amplifying and switching, switch mode power supply, power amplifying, and other applications. Its working principle incorporates two major components: the collector and emitter. Depending on the type of BJT, the collector is either an n-type or p-type material, and the emitter is the opposite. By applying a voltage between the two materials, current flows from the collector to the emitter in the forward direction, and from the emitter to the collector in the reverse direction. This phenomenon is called the “ biasing” of the BJT. The amplifying capability of the transistor is based on the fact that a small current flowing from the collector to the emitter provides a much larger current flowing from the emitter to the collector. This difference in current is the basis of the amplification. When the transistor is used as a switch in a power circuit, the biasing voltage is used to control the switch. By increasing or decreasing the voltage applied to the collector and emitter (by either making a direct connection or using a potentiometer), the amount of current flowing through the transistor is also changed. This effect is commonly known as “transistor switching”. Additionally, the transistor can also be used as a voltage regulator. This involves using the biasing voltage to regulate the output current, which can be used to regulate both the voltage and current in a circuit. In modern electronic circuits, it is common to use MOSFETS in place of BJTs, but the principle behind transistor operation remains the same. The BF820W is an ideal choice for audio, switch mode power supply, power amplifying, and other applications due to its small size, high current gain, and low voltage. Additionally, it is easy to configure and easy to install. As such, it is widely used in many different applications.

The specific data is subject to PDF, and the above content is for reference

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