BF821,235 Discrete Semiconductor Products

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BF821,235 is a type of bipolar junction transistor (BJT). It belongs to the single transistor category. A BJT is a semiconductor device consisting of three layers of semiconductor material, where one layer is shared between two regions. These two regions are called the emitter and the collector. The third layer connects these two regions and is known as the base. A BJT enables current to flow in one direction within an electronic circuit. The BF821,235 is a general-purpose BJT and is used in many applications including audio amplifier stages, automotive circuitry, and low speed switching.

The operating principle of a BJT is similar to that of a P-N junction. When a voltage is applied across the base-emitter junction, it establishes an electric field in the region near the junction. This electric field induces a current flow from the emitter region to the collector region. When the base-emitter voltage is increased further, the amount of current flowing from the emitter to the collector increases too, leading to amplification of the current. In the process, some of the energy from the electric field is converted into heat, leading to the dissipation of energy from the transistor.

The current gain of a BJT is determined by its hFE parameter. It is the ratio of the collector current to the base current. The hFE of the BF821,235 is typically in the range of 100 to 200. The collector current of the transistor is limited to 100mA, with the collector-emitter voltage being limited to 30V. The power dissipation of the BF821,235 is 0.3 W, which makes it suitable for applications where low power is required.

The BF821,235 has various applications in the automotive industry. It is used as a pre-driver for car audio systems and for controlling the speed of a DC motors. The BJT is also commonly used as an input stage in amplifiers up to 100MHz and for amplifying sensor signals. The BF821,235 can also be used as a switch in low speed applications and for data transmission. In addition, the device is used in digital circuits, such as in the logic stages of microcontrollers and in voltage regulators.

To summarize, the BF821,235 is a type of bipolar junction transistor used for various applications. It has a hFE, which determines its current gain, as well as a limited collector current and collector-emitter voltage. The power dissipation of the device is 0.3W. This makes it suitable for audio application, automotive, motor control, and data transmission circuits. The device is also used in amplifier stages, sensor circuits and digital logic stages.

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