BF824,235 Allicdata Electronics
Allicdata Part #:

1727-5480-2-ND

Manufacturer Part#:

BF824,235

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP 30V 0.025A SOT23
More Detail: Bipolar (BJT) Transistor PNP 30V 25mA 450MHz 250mW...
DataSheet: BF824,235 datasheetBF824,235 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.03599
30000 +: $ 0.03374
50000 +: $ 0.02999
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: --
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 4mA, 10V
Power - Max: 250mW
Frequency - Transition: 450MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: BF824
Description

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Transistors - Bipolar (BJT) - Single allude to a type of bipolar transistors commonly used in electronic circuits. The BF824,235 is a single-sided NPN transistor designed for use in audio amplifiers, test and measurement equipment and digital consumer products. In this article, we will take a look at the application field and working principle of the BF824,235.

TheBF824,235is a high-performance, internally matched transistor designed for audio amplifiers, test and measurement equipment, and digital consumer products. As a general-purpose NPN transistor, it is typically employed as an amplifier or switch in high-frequency applications. The BF824,235 has a wide range of operating temperatures and can be used in a variety of applications.

The BF824,235 is a monolithic Gallium Arsenide (GaAs) transistor, with a high-voltage transistor bi-polar structure. It operates with a collector current of 200mA and collector-emitter voltage of 60V. It also features a low noise figure of 0.9dB and an operating frequency range of 20 MHz to 800 MHz.

The applications of the BF824,235 are versatile, because of its wide operating temperature range and high degree of isolation between the collector and emitter terminals. It can be used in audio amplifiers, radio-frequency (RF) amplifiers and modulators, optoelectronic devices, switching and digital equipment.

In terms of its working principle, the BF824,235 works on the principle of electron transfer. When an electrical signal is applied to the emitter of the transistor, electrons are transferred through the base over to the collector. This change in the electrons causes a current-voltage response, which can be used to amplify or switch electrical signals.

In addition, the BF824,235 can be used in various high-frequency power applications, such as in high-speed optical switches, logic gates or voltage drivers. By connecting the collector, emitter and base of the transistor in different configurations, different output signals can be generated.

In summary, the BF824,235 is a high-performance, internall matched GaAs transistor designed for a wide range of audio amplifiers, test and measurement equipment and digital consumer products. It operates on the principle of electron transfer and is used in high-frequency power applications, such as in optical switches, logic gates and voltage drivers.

The specific data is subject to PDF, and the above content is for reference

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