BF824W,135 Discrete Semiconductor Products

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The BF824W,135 is a single bipolar (BJT) transistor from NXP Semiconductors. It is a NPN transistors that is designed for use in a wide variety of applications including switching, linear amplification, signal processing. With a high current gain and low collector-emitter saturation voltage, this particular type of transistor is ideal for applications that require a low operating voltage.

A bipolar junction transistor (BJT) is the most commonly used type of semiconductor device, consisting of three semiconductor layers that are sandwiched together. The three layers are the emitter, base and collector of the transistor. The base–emitter junction has a diode-like operation and it is the most important junction of the transistor. This special junction allows for current to flow from the emitter to the collector when the base voltage is properly biased with the current.

The BF824W,135 has an emitter-base voltage of 6V and a maximum collector-emitter saturation voltage of 0.3V. It has a maximum collector power dissipation of 70W and maximum current gain of 300. This provides a very high current gain and low saturation voltage, which make it particularly useful in applications that have a low operating voltage. It is also effective at frequencies up to 250 MHz, making it suitable for amplified, signal processing and switching applications.

In amplifier applications, the BF824W,135 can be used as an active component to increase the power of the amplifier. When used for amplification, the transistor amplifies the input signal voltage, boosting the power of the amplifier. This amplified signal can then be used for a variety of purposes, such as driving loud speakers, driving power amplifiers, or preamplification in multi stage amplifier systems.

The BF824W,135 is also suitable for use in switching applications, where it can be used as a switch to control the current flow from the power supply to the load. In this application, when the base voltage is more positive than the emitter voltage, the transistor is in the ‘on’ state, allowing current to flow. When the base voltage is lower than the emitter voltage, the transistor is in the ‘off’ state, preventing current from flowing. This makes the transistor useful for controlling the current flow in electrical circuits.

The BF824W,135 is a versatile semiconductor component that is suitable for use in a wide variety of applications. Its high current gain, low collector-emitter saturation voltage, and high operating frequency make it a popular choice for amplifier, signal processing, and switching applications. It is also useful for controlling the current flow in electrical circuits, and can be used to amplify the power of an amplifier.

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