BFG10,215

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BFG10,215 transistor is an RF field-effect transistor (FET) specifically designed to be used in a wide range of electronic applications. The device features a high-performance bipolar junction transistor (BJT) core and can be used to provide power, control signals and much more. It is characterized by a high breakdown voltage and excellent thermal stability.

The device is composed of a pair of three-dimensional, spherically-shaped, concentric regions. Each region serves a distinct purpose, with the two regions taking on different characterizations as they respond to different types of signals.

The active region, closest to the gate, serves as an amplification element and is primarily responsible for providing gain and bias control. The adjacent outer region, or drain region, serves as a buffer and is important for providing output speed and power capabilities. The voltage applied to both the gate and drain regions determines the level of amplification and current flow between the two regions.

The BFG10,215 transistor also features an internal amplifier, providing performance advantages and reducing your need to employ additional active components. The internal amplifier is used to amplify the gain and reduce the noise due to excessive signal levels.

In terms of its operating principles, the BFG10,215 transistor is a static device. That is, it is comprised of two distinct, static parts: a gate and drain. The bias voltage applied to the gate region is used to determine the flow of current between the two regions, while the drain region is used to control the magnitude of the current flow.

The gate and drain regions of the transistor are connected to one another by an interconnection, allowing exchange of current between them in proportion to the voltage difference between the two. As the voltage across the two regions changes, the transistor’s transconductance also changes, enabling the device to respond to different types of signals and frequencies.

The BFG10,215 transistor is ideally suited for use in applications that require high power operation, such as microwave systems, transmitters, receivers, amplifiers and cosmology instrumentation. Its ability to provide a useful combination of gain, power, speed and thermal stability makes it especially useful in these types of applications.

The device is also widely used in industrial, automotive, consumer and medical applications. For example, it is used in mobile phones and sensors to provide a high-power output and thermal stability, and in implantable medical devices for long-term stability and reliability.

In summary, the BFG10,215 transistor is a field-effect transistor (FET) specifically designed for use in a variety of electronic applications, from high-power microwaves to medical implants. It is composed of two distinct regions and is characterized by a high breakdown voltage, excellent performance and thermal stability. The device is suitable for use in many industrial, automotive, consumer and medical applications.

The specific data is subject to PDF, and the above content is for reference