BFG135,115

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The BFG135,115 is a high-frequency bipolar junction transistor (BJT) designed for the radio frequency (RF) power amplifier and switching applications. It has very high breakdown voltages, and a wide temperature range, making it suitable for use in a variety of high-power environments. This article will discuss its application fields and working principle.

Application Fields

The BFG135,115 is well-suited for many high-frequency applications, such as wireless communications. It is used in high-gain amplifiers and low-distortion switches. This device is commonly used in applications such as radio transmitters, WiFi routers, and radio navigation systems, as it is capable of providing reliable performance in these types of environments. It is also used in high-frequency radio equipment such as radar and satellite receivers.

In addition, this device can be used in other types of power amplifier applications. It can be used in ultralow noise amplifiers, wideband amplifiers, and Class-AB RF amplifiers. It is also used in applications such as high-frequency oscillators, filters, and power dividers. This device is a great choice for RF power amplifiers, as it can provide robust performance over a wide temperature range.

Working Principle

The BFG135,115 is a bipolar junction transistor that operates using a direct current voltage. It works by using the base-collector junction of the transistor to control the current flow through the base-emitter junction. The base-collector junction is connected to the positive voltage, while the base-emitter junction is connected to the negative voltage. As the current through the base-emitter junction increases, the current flow through the collector-emitter junction increases as well.

The device is then able to control the voltage applied across the collector-emitter region. This allows for the device to be used as an amplifier, as the output current will be proportional to the input current. The device also has a very fast frequency response, which makes it ideal for use in high-frequency applications such as those mentioned above.

The BFG135,115 is a very reliable and robust high-frequency transistor. It is capable of providing reliable performance in a variety of applications, including those mentioned above. It is well-suited for use in applications that require a wide temperature range, due to its large breakdown voltages. This device is an excellent choice for high-frequency power amplifier applications, as it is capable of providing robust performance over a wide temperature range.

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