BFG10/X,215

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	8V
Frequency - Transition:	1.9GHz
Noise Figure (dB Typ @ f):	--
Gain:	7dB
Power - Max:	400mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	25 @ 50mA, 5V
Current - Collector (Ic) (Max):	250mA
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-253-4, TO-253AA
Supplier Device Package:	SOT-143B
Base Part Number:	BFG10

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BFG10/X,215 Introduction

BFG10/X,215 is a type of RF transistor, specifically a bipolar junction transistor, used in radio frequency applications. BFG10/X,215 transistors are capable of switching low power levels up to several watts and operating frequencies up to 200 MHz, making them ideal for high frequency and remote control applications like radio receivers and transmitters. Additionally, they offer improved properties such as high linearity, high gain, and low noise.

BFG10/X,215 Application field

BFG10/X,215 transistors are widely used in microwave or radio communication applications. In these situations, the transistors can be used for power amplification, switching, and oscillation. Some examples of its applications include:

• Amplifiers for signals in the VHF and UHF frequency range;
• RF switching with fast switching times;
• Coaxial rectifiers;
• Modulation of oscillating signals in amplifier circuits;
• High frequency mixer circuits;
• High-sensitivity UHF cameras;
• Radar components like transmitters, antennas, amplifiers, and oscillators.

BFG10/X,215 transistors can also be used in other applications such as medical imaging, automotive electronics, and satellite communications.

BFG10/X,215 Working principle

A bipolar junction transistor is an active semiconductor element with an emitter, collector, and base. Each of these components serves a specific purpose.The emitter is the main source of electrons that generate current, while the collector serves as the sink of electrons. In between the emitter and the collector lies the base, which behaves as a switch, controlling the flow of electrons from the emitter to the collector.The transistors are operated by applying a voltage to the base. When the voltage is increased, current flow increases causing an increase in collector current, which, in turn, causes an increase in the voltage across the collector and emitter. The gain of a transistor can be adjusted using the applied voltage.When the transistor is connected in a circuit, the output signal will be determined by the input signal, transconductance, and the load resistance of the transistor.

Conclusion

BFG10/X,215 transistors are a popular choice for RF applications due to their high gain, low noise, and high linearity. They offer excellent performance for numerous types of applications ranging from transmitters, receivers, mixing circuits, and amplifiers in VHF and UHF bands as well as medical imaging, automotive electronics, and satellite communications. The transistors are operated by applying a voltage to the base, which controls the flow of current in between the emitter and the collector.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description