Allicdata Part #: | BFG10W/X,115-ND |
Manufacturer Part#: |
BFG10W/X,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 10V 250MA SOT343N |
More Detail: | RF Transistor NPN 10V 250mA 1.9GHz 400mW Surface M... |
DataSheet: | BFG10W/X,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 10V |
Frequency - Transition: | 1.9GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | -- |
Power - Max: | 400mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 25 @ 50mA, 5V |
Current - Collector (Ic) (Max): | 250mA |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-343 Reverse Pinning |
Supplier Device Package: | 4-SO |
Base Part Number: | BFG10 |
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The BFG10W/X,115 is a type of Bipolar Junction Transistor (BJT) designed specifically for use in RF (radio frequency) applications. In basic terms, it is an electronic device which can act as either an amplifier or a switch for electronic signals. This particular type of transistor is typically used in RF applications such as wireless communication, measuring and detection instruments, radar systems, and more. As such, it is important to understand how this type of transistor works in order to make the most of it.
At its core, the BFG10W/X,115 is a two-terminal device composed of a semiconductor material, typically silicon. It works by allowing electrons to flow from the base terminal to the collector terminal, with the current controlled by the amount of voltage applied to the base terminal. In this way, it can be used as an amplifier due to its ability to amplify signals, or as a switch due to its ability to control current flow.
When using the BFG10W/X,115 as an amplifier, the base voltage is used to control the current flow, and this current is then amplified and passed to the collector terminal. This allows for a wide range of applications, including radio communication and detection instruments. On the other hand, when it is used as a switch, the current can be controlled by either the base voltage or the collector voltage, allowing for a wide range of applications such as speed controllers, relays, and more.
Another important aspect to consider is the frequency range of the BFG10W/X,115. This transistor is designed for RF applications, and thus has an RF frequency range of up to 200MHz. This is well suited for most RF applications, making the BFG10W/X,115 a popular choice for radio communication systems.
It is also important to note that the BFG10W/X,115 is a three-terminal device, meaning that it has an emitter terminal in addition to the base and collector terminals. This allows for a greater degree of control over the transistor’s gain, and further enables its use in RF applications.
In conclusion, the BFG10W/X,115 is an excellent choice for a wide range of RF applications. It is a three-terminal transistor designed specifically for RF applications, and it offers a wide frequency range, allowing it to be used in a variety of applications. Its ability to act as either an amplifier or a switch makes it a versatile tool, and its three terminals provide a greater degree of control over the transistor\'s gain. All in all, the BFG10W/X,115 is a great choice for any RF application.
The specific data is subject to PDF, and the above content is for reference
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