BFN 19 E6327 Discrete Semiconductor Products |
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Allicdata Part #: | BFN19E6327TR-ND |
Manufacturer Part#: |
BFN 19 E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PNP 300V 0.2A SOT-89 |
More Detail: | Bipolar (BJT) Transistor PNP 300V 200mA 100MHz 1W ... |
DataSheet: | BFN 19 E6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 30mA, 10V |
Power - Max: | 1W |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | PG-SOT89 |
Base Part Number: | BFN19 |
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BFN 19 E6327 is a single bipolar transistor. The device is designed for use in low to medium power amplifier and switch applications. These include signal processing in the audio and radio frequency range, as well as power amplifiers in low-voltage signal chains. It is also suitable for line driver, battery switches and motor drives applications.
The BFN 19 E6327 has a gain of over 200, and an average power dissipation of 30mW when used at collector currents between 0.1mA and 1mA. It is available in an NPN package featuring a voltage drop of 1.9V and a hFE of 1000. It has a minimum base-emitter saturation voltage of 1.2V and a maximum frequency of 1GHz.The BFN 19 E6327 has a collector-emitter voltage of 20V, with a maximum continuous collector current of 600mA.
The working principle of the BFN 19 E6327 is based on the fact that when current flows through the base-emitter junction of a bipolar transistor, it creates an electric field that attracts electrons to the emitter. This electric field can be used to control the flow of current through the collector-emitter junction, allowing the transistor to act as a switch or an amplifier. When the base-emitter junction is forward biased, current flows and the collector-emitter junction becomes forward biased as well, allowing current to flow in that direction. When the base-emitter junction is reversed biased, no current flows and the collector-emitter junction is reversed biased as well, preventing current from flowing in that direction.
The BFN 19 E6327 can be used in a variety of electronic circuits, including amplifiers, analog circuits, linear circuits, logic circuits, audio systems, power supplies, and switches. It is a versatile device that can be used in a wide range of applications, including medical and consumer electronics. In medical applications, it is used to control the amount of current passing through electrodes to transmit signals to and from an implantable medical device, such as a pacemaker. In consumer electronics, it is used in power converters and power amplifiers. It is also used in robotics and automation applications.
In summary, the BFN 19 E6327 is a single bipolar transistor. It is suitable for use in low to medium power amplifier and switch circuits including signal processing within the audio and radio frequency range, as well as power amplifiers in low voltage signal chains. It has a gain of over 200, and an average power dissipation of 30mW when used at collector currents between 0.1mA and 1mA. It can be used in a variety of electronic circuits and is a versatile device that is suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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