Allicdata Part #: | BFP640ESDH6327XTSA1TR-ND |
Manufacturer Part#: |
BFP640ESDH6327XTSA1 |
Price: | $ 0.14 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS RF NPN 46GHZ 4.7V SOT343 |
More Detail: | RF Transistor NPN 4.7V 50mA 46GHz 200mW Surface Mo... |
DataSheet: | BFP640ESDH6327XTSA1 Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.12812 |
6000 +: | $ 0.11985 |
15000 +: | $ 0.11159 |
30000 +: | $ 0.10580 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 4.7V |
Frequency - Transition: | 46GHz |
Noise Figure (dB Typ @ f): | 0.6dB ~ 2dB @ 150MHz ~ 10GHz |
Gain: | 7dB ~ 30dB |
Power - Max: | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 110 @ 30mA, 3V |
Current - Collector (Ic) (Max): | 50mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-82A, SOT-343 |
Supplier Device Package: | SOT-343 |
Base Part Number: | BFP640 |
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Introduction
The BFP640ESDH6327XTSA1 is a modern, high-performance plastic bipolar RF transistor from NXP Semiconductors. This device is designed exclusively for use in high frequency applications such as radios and cellphones. It is capable of providing great performance with high gain and linearity. This makes it an ideal component for RF systems requiring optimal signal conditioning.
Features
The BFP640ESDH6327XTSA1 is designed to be integrated into high-performance RF systems. Its capabilities include low noise and high gain, while remaining very linear in operation. This device can provide the required signal conditioning and amplification for operation in a variety of demanding applications.
The device features an optimized package design which helps reduce RF noise. Additionally, the device offers a range of integrated features such as ESD protection, thermal shutoff and reverse bias protection.
Applications
The BFP640ESDH6327XTSA1 is designed specifically for use in high frequency applications such as radios and cellphones. This device is ideal for applications that require high levels of signal conditioning and amplification. It can be used in a variety of demanding applications including base stations, drones, RF communication, satellite navigation systems and 5G networks.
Working Principle
The BFP640ESDH6327XTSA1 is a bipolar RF transistor. It works by allowing current to move through the collector-base junction when a small amount of base current is applied. This effect is known as the transistor amplification effect. The small amount of base current causes a large amount of current to be amplified through the collector-base junction. The device has a fixed gain which is determined by the ratio of collector current to the base current.
Conclusion
The BFP640ESDH6327XTSA1 is a modern, high-performance plastic bipolar RF transistor from NXP Semiconductors that is ideal for use in high frequency applications such as radios and cellphones. It is capable of providing great performance with high gain and linearity. This device can provide the required signal conditioning and amplification for operation in a variety of demanding applications.
The specific data is subject to PDF, and the above content is for reference
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