Allicdata Part #: | BFP640FE6327INTR-ND |
Manufacturer Part#: |
BFP640FE6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANSISTOR NPN RF 4V TSFP-4 |
More Detail: | RF Transistor NPN 4.5V 50mA 40GHz 200mW Surface Mo... |
DataSheet: | BFP640FE6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 4.5V |
Frequency - Transition: | 40GHz |
Noise Figure (dB Typ @ f): | 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz |
Gain: | 23dB |
Power - Max: | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 110 @ 30mA, 3V |
Current - Collector (Ic) (Max): | 50mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 4-SMD, Flat Leads |
Supplier Device Package: | 4-TSFP |
Base Part Number: | BFP640 |
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The BFP640FE6327 is a small-signal RF transistor that is ideal for active circuits in the UHF, VHF, and FM broadcast bands. It has a high-current gain-bandwidth product and offers excellent linearity and spectral purity, making it a perfect solution for applications such as low-noise amplifiers, distributed-amplifier cascades, low-noise oscillators, and frequency-conversion networks. The BFP640FE6327 offers exceptional performance in wireless communication and broadcasting applications, as well as in oscillators, oscillator-driver circuits, and other frequency-sensitive circuits.
The construction of BFP640FE6327 is based on vertical double-diffused metal-oxide-semiconductor (VDMOS) technology. This type of transistor design allows for the device to be used in a variety of circuit configurations, such as common emitter, common collector, and cascode. This type of design also allows the transistor to be operated in a variety of biasing configurations, including class A, class B, class AB, and class C.
The BFP640FE6327 is designed to have a high-current gain-bandwidth product, which helps to improve linearity and noise suppression. Its high-current gain also makes it an excellent choice for use in oscillators as well as for low-noise amplifier and frequency-conversion networks. The device has a low power consumption and a wide operating temperature range, making it suitable for applications where power dissipation is a critical factor.
The working principle of the BFP640FE6327 is quite simple. The transistor is made up of two N-type and two P-type regions. When an external current flows through the device, it forms a base-collector-emitter circuit. This results in the collector current flowing depending on the base current and the voltage on the base. As the base current increases or decreases, the collector current also changes in the same proportion.
The BFP640FE6327 features a stable transition frequency and a wide range of output power capabilities, making it an ideal choice for a variety of applications. Its excellent linearity and spectral purity make it an excellent choice for low-noise amplifiers, distributed amplifier cascades, and low-noise oscillators. Additionally, its wide operating temperature range makes it suitable for use in a variety of difficult applications. The BFP640FE6327 is a versatile RF transistor that offers excellent performance in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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