BFP640FH6327XTSA1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	4.5V
Frequency - Transition:	40GHz
Noise Figure (dB Typ @ f):	0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Gain:	23dB
Power - Max:	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	110 @ 30mA, 3V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	4-SMD, Flat Leads
Supplier Device Package:	4-TSFP
Base Part Number:	BFP640

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Introduction

BFP640FH6327XTSA1 is a radio-frequency (RF) bipolar junction transistor (BJT) manufactured by NXP Semiconductors. It is a 2 GHz fast switching transistor with a high f_T of 8 GHz, a 2.5 W power dissipation and an ESD rating of class 3B. The BFP640FH6327XTSA1 is ideal for use in a variety of applications, including but not limited to switching, amplifier, transmitter, clock generator, and signal generator circuits.

Application Field

The BFP640FH6327XTSA1 transistor is suitable for high-frequency, high-power applications. Its high f_T and high power dissipation make it suitable for use in circuits with switching frequencies of up to 2 GHz and power levels of up to 2.5 W. The transistor is also suitable for use in amplifier, transmitter, clock generator, and signal generator circuits.The BFP640FH6327XTSA1 can be used in automotive, audio, industrial, and medical applications. It is also suitable for use in mobile devices, such as cellular telephones and other portable communication devices.

Working Principle

The BFP640FH6327XTSA1 is a NPN bipolar junction transistor that operates using the principle of current amplification. In an NPN transistor, an input current entering the base terminal controls the amount of current flowing from the collector to the emitter. As the base current increases, the current flowing through the collector-emitter junction also increases, and as the base current decreases, the current flowing through the collector-emitter junction decreases.The BFP640FH6327XTSA1 transistor consists of two p-type regions and one n-type region. The p-type regions are connected to the emitter and collector, while the n-type region is connected to the base. When the base voltage rises, electrons move from the base to the emitter, and current flows from the collector to the emitter. This current flow is amplified by the transistor, allowing current to flow from the collector to the emitter at a greater rate than the current entering the base.

Conclusion

The BFP640FH6327XTSA1 is a high-frequency, high-power transistor suitable for use in a variety of applications. The transistor operates using the principle of current amplification, and is suitable for use in automotive, audio, industrial, and medical applications. Its high f_T and high power dissipation make it ideal for use in circuits with switching frequencies of up to 2 GHz and power levels of up to 2.5 W.

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