Allicdata Part #: | BFP640FESDH6327XTSA1TR-ND |
Manufacturer Part#: |
BFP640FESDH6327XTSA1 |
Price: | $ 0.14 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS RF NPN 4.5V 50MA 4TSFP |
More Detail: | RF Transistor NPN 4.7V 50mA 46GHz 200mW Surface Mo... |
DataSheet: | BFP640FESDH6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.12431 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 4.7V |
Frequency - Transition: | 46GHz |
Noise Figure (dB Typ @ f): | 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz |
Gain: | 8B ~ 30.5dB |
Power - Max: | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 110 @ 30mA, 3V |
Current - Collector (Ic) (Max): | 50mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 4-SMD, Flat Leads |
Supplier Device Package: | 4-TSFP |
Base Part Number: | BFP640 |
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The BFP640FESDH6327XTSA1 is a bipolar transmitter (BJT) device specifically designed to operate in the radio frequency (RF) arena. It is developed by NXP Semiconductors, a leader in the transistor industry. In terms of construction, the transistor comes in a small surface-mount plastic package, which helps it to fit into tight spaces.
The BFP640FESDH6327XTSA1 is usually used as an amplifier in systems that transmit radio waves. It provides a high current gain with a low noise voltage, allowing it to deliver clean, reliable amplification. The device’s high level of retention ensures that the transmission signal remains stable over long distances.
The BFP640FESDH6327XTSA1 is an N-Channel transistor that utilizes a special construction to minimize the internal resistance between the source and gate. This helps it to achieve maximum power efficiency and performance. The device’s high switching frequency and low power consumption also allow it to operate without producing excess heat.
Apart from transmitters, the BFP640FESDH6327XTSA1 can also be used in a variety of applications. It is a popular component in automotive systems where it is used to amplify signals in fuel injectors, ignition systems, and power steering systems. The device’s reliability makes it an ideal choice for consumer electronics as well.
The working principle behind the BFP640FESDH6327XTSA1 is quite simple. When a voltage is applied to the transistor’s base, the current flows through the emitter and collector to create a current gain. This current gain amplifies the input signal before it is transmitted to its destination.
In summary, the BFP640FESDH6327XTSA1 is a high performance transistor developed for RF applications. It offers a high current gain with low noise voltage, making it ideal for producing clean, reliable amplification in transmitters. The device’s low power consumption and switching frequency also makes it suitable for automotive and consumer electronics applications. By understanding its working principles and possible application fields, it is easier to find the perfect fit for your design.
The specific data is subject to PDF, and the above content is for reference
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