Allicdata Part #: | BFP650FH6327XTSA1TR-ND |
Manufacturer Part#: |
BFP650FH6327XTSA1 |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS RF NPN 42GHZ 4.5V 4TSFP |
More Detail: | RF Transistor NPN 4.5V 150mA 42GHz 500mW Surface M... |
DataSheet: | BFP650FH6327XTSA1 Datasheet/PDF |
Quantity: | 9000 |
3000 +: | $ 0.12031 |
6000 +: | $ 0.11254 |
15000 +: | $ 0.10478 |
30000 +: | $ 0.09935 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 4.5V |
Frequency - Transition: | 42GHz |
Noise Figure (dB Typ @ f): | 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz |
Gain: | 11dB ~ 21.5dB |
Power - Max: | 500mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 110 @ 80mA, 3V |
Current - Collector (Ic) (Max): | 150mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 4-SMD, Flat Leads |
Supplier Device Package: | 4-TSFP |
Base Part Number: | BFP650 |
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The BFP650FH6327XTSA1 is a small signal transistors used in high frequency applications. It is a bipolar junction transistor (BJT) operating at radio frequencies (RF). This transistor has many features that allow it to be used in a variety of applications, including RF power amplifiers, mixers, and switches.
The BFP650FH6327XTSA1 is a two terminal NPN device with a collector-emitter voltage maximum of 150 Vcc. It has a rated collector current of 1.2A. The package size is a miniature ultra small outline (M1). This device has excellent thermal stability and offers good gains in high frequency applications.
The transistor is suitable for use in a wide range of applications such as radio receivers, amplifiers, and oscillators. It is suitable for radio broadcasting at frequencies up to 400 MHz. The built-in base to emitter resistance (Rb-e) is 100-800 ohms with a gain-bandwidth product of 17 GHz.
The working principles of the BFP650FH6327XTSA1 are quite simple. When a current is applied to the base of the transistor, it allows current to flow from the collector to the emitter. This creates a current amplification effect which allows the transistor to be used to increase the gain of the input signals. This transistor is also capable of current limiting, which can be used to protect sensitive devices from damage caused by excessive current.
The BFP650FH6327XTSA1 is an NPN transistor which is typically used in different types of amplifier circuits. This type of amplifier is able to produce both large and small input signals, allowing for enhanced performances in different types of circuit designs. The built-in feedback resistors and capacitors provide the transistor with additional gain and capability for frequency filters. The transistors can also be used as switches to control the flow of current in different types of circuits.
The BFP650FH6327XTSA1 has a wide range of application possibilities. It can be used in a wide range of RF circuits, such as amplifiers, mixers, and switches. The high current gain of the transistor makes it ideal for applications where high power levels are needed. It can also be used in low power applications. The transistor is also suitable for use in circuits operating at frequencies up to 400 MHz. This makes it suitable for use in high frequency broadcasting and communication applications.
In conclusion, the BFP650FH6327XTSA1 is a small signal transistors used for radio frequency (RF) applications. It is a NPN bipolar junction transistor with a collector-emitter voltage rating of 150 volts and a collector current of 1.2A. The BFP650FH6327XTSA1 has a wide range of application possibilities, including use in RF power amplifiers, mixers, and switches. It can also be used in circuits operating at frequencies up to 400MHz. Its excellent thermal stability and good gains make it an ideal choice for many RF applications.
The specific data is subject to PDF, and the above content is for reference
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