BFR181E6327HTSA1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	8GHz
Noise Figure (dB Typ @ f):	0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Gain:	18.5dB
Power - Max:	175mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 5mA, 8V
Current - Collector (Ic) (Max):	20mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	BFR181

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Introduction

The BFR181E6327HTSA1 is a bipolar radio frequency (Bipolar RF) transistor intended for use in small-signal general-purpose RF applications. It includes a dielectric isolator that provides high input impedance, flat gain characteristics, and low power consumption. This makes it suitable for use in many systems including audio amplifiers, linear and class B amplifiers, and signal processing.

Applications

The BFR181E6327HTSA1 is often used in general-purpose RF applications including electronic circuits, amplifiers, antenna switching, power control, RF signal reception, and the like. These applications are primarily concerned with radio frequency signals and require the input signal to remain stable while the output power is varied.For example, the BFR181E6327HTSA1 may be used to amplify wireless data signals in wireless networks. Its isolated design makes it ideal for this application as it prevents the RF signal from being affected by external sources. It is also suitable for use in audio processing and class B amplifiers.

Mechanism

The BFR181E6327HTSA1 comprises a base, a collector, and an emitter. When the base-collector junction is forward-biased, a current flows from the collector to the emitter, while simultaneously a minority carrier is injected into the base. This carrier multiplies and contributes to the transistor’s current gain. As the transistor is operating at radio frequency, due to its isolation, the input signal is insulated from the external environment.The BFR181E6327HTSA1 is designed to have a high input impedance, flat gain characteristics and low power consumption. This allows it to deliver good performance at low frequencies, while still being able to operate over a wide frequency range. This is achieved by carefully controlling the current gain during the multiplicative process.

Conclusion

The BFR181E6327HTSA1 is an RF transistor that is ideal for small-signal general-purpose RF applications. Its isolation, along with its high input impedance and low power consumption, makes it suitable for use in audio amplifiers, linear amplifiers, and class B amplifiers, as well as other signal processing applications. The device is made up of a base, collector, and emitter and works by injecting minority carriers into the base to obtain current gain. The high frequency performance of the transistor is achieved by carefully controlling the current gain during the multiplicative process.

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