BFR106,215 Allicdata Electronics
Allicdata Part #:

568-1987-2-ND

Manufacturer Part#:

BFR106,215

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS NPN 15V 5GHZ SOT-23
More Detail: RF Transistor NPN 15V 100mA 5GHz 500mW Surface Mou...
DataSheet: BFR106,215 datasheetBFR106,215 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Gain: --
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 9V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: BFR106
Description

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Introduction

The BFR106,215 is a type of bipolar junction transistors (BJT) used for radio frequency (RF) applications. It is widely used for a variety of tasks including amplifying, filtering, and switching. This article will discuss the application field and working principle of the BFR106,215.

Application field of BFR106,215

The BFR106,215 is a wideband transistor used to perform high-frequency tasks. It is suitable for use in RF amplifiers and wideband signal switching applications. Additionally, it can also be used in switching circuitry and analog signal processing, making it a versatile electronic component. It is often used in the wireless communication industry for applications such as signal filtering, amplifying, and switching. The BFR106,215 is capable of performing up to 100V and can handle signal waves up to 10GHz.

In addition to being used in the wireless communication industry, the BFR106,215 bipolar transistor is also frequently used in television and radio broadcast amplifiers. Since it has a relatively high frequency range, the BFR106,215 is also often used in digital signal processing and in radio astronomy applications.

Working principle of BFR106,215

The BFR106,215 is a type of bipolar junction transistor which means that is composed of two “p-n” junctions. In this case, the two junctions are the collector-base junction and the emitter-base junction. The collector and the base are both given positive voltages while the emitter is grounded. When a small current is applied through the base of the transistor, it can then “control” the amplified current that flows from the collector to the emitter.

The BFR106,215 transistor can operate in both an amplification mode and a switching mode. In amplification mode, the current applied to the base is able to increase the current flow at the collector end of the transistor. This amplified current can then be used to drive other components. In the switching mode, the current applied to the base is used to quickly cut off the current flow to the collector. This can be used in applications such as signal filtering and signal switching.

Conclusion

The BFR106,215 is a type of bipolar junction transistor designed for RF applications. It can handle up to 100V and can operate up to 10GHz. It is usually used in wireless communication, television and radio broadcast amplifiers, digital signal processing and radio astronomy applications. The BFR106,215 operates in both an amplification mode and a switching mode. The collector is given a positive voltage while the base and emitter are switched to control the amplified current flow.

The specific data is subject to PDF, and the above content is for reference

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