BFR193WH6327XTSA1 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	8GHz
Noise Figure (dB Typ @ f):	1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain:	10.5dB ~ 16dB
Power - Max:	580mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 30mA, 8V
Current - Collector (Ic) (Max):	80mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	PG-SOT323-3
Base Part Number:	BFR193

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Introduction to BFR193WH6327XTSA1

The BFR193WH6327XTSA1 is a high-performance complementary enhancement mode Gallium Nitride (GaN) power transistor. This transistor is a type of bipolar junction transistor (BJT), which is a type of semiconductor voltage and current source. The BFR193WH6327XTSA1 is specifically designed for radio frequency (RF) circuits in markets such as aerospace, defense and automotive.

Features & Benefits of BFR193WH6327XTSA1

The BFR193WH6327XTSA1 is designed to operate from 4.5-17 V with a 150 ns switching time, making it an excellent choice for RF applications. The transistor is capable of delivering high power output with the ability to reach 2.5 W of peak power. This power capability is impressive even for a BJT transistor, making the BFR193WH6327XTSA1 one of the best GaN transistors available. Additional features include a breakdown voltage of 25 V, a maximum operating temperature of 175 C, and a low on-state resistance of 5 mOhms.

Applications

The BFR193WH6327XTSA1 has many applications in the RF field. It is often used in military and aerospace electronics such as radios, satellites, missiles, and other such platforms. The BFR193WH6327XTSA1 is often used in these platforms as a power booster for high power applications, as it is able to achieve a high power density.The BFR193WH6327XTSA1 is also used in automotive electronics such as engines, which require high power and precise regulation of voltage, current, and temperature. It is also used in short and medium range communication systems in the automotive field.

Working Principle

The BFR193WH6327XTSA1 is a GaN transistor and as such it operates similarly to any other BJT. The working principle of BJTs is fairly simple and straightforward. Every transistor is made up of three main parts: collector, base, and emitter. In the case of the BFR193WH6327XTSA1, the collector and emitter are made of semiconductor materials such as gallium nitride, while the base is a metal layer. When the transistor is in an off state, there is no current flowing between the collector and emitter. However, when a voltage is applied to the base, a small amount of current will flow from base to emitter. This current then causes the collector to draw a larger current from the emitter and this is what produces the amplifying effects of the transistor. When the power or voltage applied to the base is changed, the current between collector and emitter changes as well, resulting in an increased or decreased power output. This is why the BFR193WH6327XTSA1 is so useful for RF applications, as it can be accurately regulated to deliver precisely the right amount of power at any given time.

Conclusion

The BFR193WH6327XTSA1 is an excellent GaN power transistor that has a wide range of applications in RF circuits. Its fast switching time and high power output make it ideal for military, aerospace, and automotive electronics. The working principle of the transistor is based on its three main components, the collector, base, and emitter. By controlling the voltage applied to the base, the transistor can be precisely regulated to deliver the required power at any given time.

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